The IPB95R450PFD7 is a 950 V CoolMOS™ PFD7 superjunction N-channel MOSFET in a PG-TO263-3 (D²PAK) package, designed for high-efficiency lighting and industrial switch-mode power supplies. It features a maximum on-state resistance of 450 mΩ at 25°C, an integrated ultra-fast body diode with a reverse recovery charge of 0.72 μC at 500 V, and a gate charge total of 43 nC. The device has a gate threshold voltage of 3 V with a variation of ±0.5 V, and supports a continuous drain current of 13.3 A. It is fully qualified for industrial applications per JEDEC standards, with an operating junction temperature range of -55°C to 150°C and thermal resistance from junction to case of 1.20 °C/W. The package measures 9.65 mm × 10.41 mm with a 4.1 mm lead width.
950 V CoolMOS™ PFD7 superjunction MOSFET in TO-263 package
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPB95R450PFD7) complements the CoolMOS™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R450PFD7 in the TO-263 package features RDS(on) of 450 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.
This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB95R450PFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPB95R450PFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.4500 ohms |
| QG | 43 nC |
