Infineon Technologies AG 20V 40V MOSFET Transistor IPB80P04P407ATMA2

MOSFET_(20V 40V) PG-TO263-3 Product overview: IPB80P04P407ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 40V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80P04P407ATMA2 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1378624-IPB80P04P407ATMA2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: OptiMOS™
Package: Tape & Reel
Product Status: Active
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Base Product Number: IPB80P
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6085 pF @ 25 V
Power Dissipation (Max): 88W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99

P-Channel 40V 80A (Tc) 88W (Tc) Surface Mount PG-TO263-3-2

Power Field-Effect Transistor