Infineon Technologies AG 600V 14A TO252 MOSFET Transistor IPD60R170CFD7ATMA1

Description
Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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Description
Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IPD60R170CFD7ATMA1 - Rochester Electronics
Newburyport, MA, United States
Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Power Field-Effect Transistor, 14A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Supplier's Site Datasheet
Singapore
600V 14A TO252 MOSFET Transistor
278-IPD60R170CFD7ATMA1
600V 14A TO252 MOSFET Transistor 278-IPD60R170CFD7ATMA1
MOSFET N-CH 600V 14A TO252-3 Product overview: IPD60R170CFD7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 14A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R170CFD7ATM A1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 14A TO252-3 Product overview: IPD60R170CFD7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 14A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 14A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD60R170CFD7ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2207407 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2207407
MOSFETs 2207407
Infineon MOSFET IPD60R170CFD7ATMA1

Infineon MOSFET IPD60R170CFD7ATMA1

Supplier's Site
MOSFETs - 2207407P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2207407P
MOSFETs 2207407P
Infineon MOSFET IPD60R170CFD7ATMA1

Infineon MOSFET IPD60R170CFD7ATMA1

Supplier's Site
MOSFETs - 2207406 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2207406
MOSFETs 2207406
Infineon MOSFET IPD60R170CFD7ATMA1

Infineon MOSFET IPD60R170CFD7ATMA1

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R170CFD7ATMA1 - 921282-IPD60R170CFD7ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R170CFD7ATMA1
921282-IPD60R170CFD7ATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R170CFD7ATMA1 921282-IPD60R170CFD7ATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 921282-IPD60R170CFD7 ATMA1 Series: CoolMOS™ CFD7 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 650 V 14A (Tc) 76W (Tc) Surface Mount PG-TO252-3 Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Package: Reel - TR Mounting: Surface Mount Family Name: IPD60R170 Categories: Discrete Semiconductor Products Case / Package: PG-TO252-3 ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Balance Quantity per package: 2500 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 25 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: IPD60R170CFD7ATMA1DK R, IPD60R170CFD7, IPD60R170CFD7ATMA1-N D, IPD60R170CFD7ATMA1TR , SP001617934, IPD60R170CFD7ATMA1CT

Manufacturer: Infineon Technologies
Win Source Part Number: 921282-IPD60R170CFD7ATMA1
Series: CoolMOS™ CFD7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 14A (Tc) 76W (Tc) Surface Mount PG-TO252-3
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPD60R170
Categories: Discrete Semiconductor Products
Case / Package: PG-TO252-3
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 2500
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPD60R170CFD7ATMA1DKR, IPD60R170CFD7, IPD60R170CFD7ATMA1-ND, IPD60R170CFD7ATMA1TR, SP001617934, IPD60R170CFD7ATMA1CT

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD60R170CFD7ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD60R170CFD7ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD60R170CFD7ATMA1
MOSFET N-CH 600V 14A TO252-3

MOSFET N-CH 600V 14A TO252-3

Supplier's Site
Mosfet, N-Ch, 600V, 14A, To-252; Transistor Polarity Infineon - 43AC9322 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 600V, 14A, To-252; Transistor Polarity Infineon
43AC9322
Mosfet, N-Ch, 600V, 14A, To-252; Transistor Polarity Infineon 43AC9322
MOSFET, N-CH, 600V, 14A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

MOSFET, N-CH, 600V, 14A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.144ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power DissipationRoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET HIGH POWER_NEW

MOSFET HIGH POWER_NEW

Buy Now Datasheet

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD60R170CFD7ATMA1 278-IPD60R170CFD7ATMA1 2207407 921282-IPD60R170CFD7ATMA1 IPD60R170CFD7ATMA1 43AC9322 IPD60R170CFD7ATMA1
Product Name 600V 14A TO252 MOSFET Transistor MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPD60R170CFD7ATMA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 600V, 14A, To-252; Transistor Polarity Infineon MOSFET
Polarity N-Channel N-Channel N-Channel
rDS(on) 0.1700 ohms 0.1440 ohms
Package Type PG-TO252-3 Tape & Reel (TR) TO-252 (DPAK); TO-252 SOT3; PG-TO252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
MOSFET Operating Mode Enhancement
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