The IPA50R500CE is a 500V N-channel MOSFET designed for cost-sensitive consumer and lighting applications, utilizing CoolMOS™ superjunction technology. It is packaged in a PG-TO-220 FullPAK with a maximum height of 29.75 mm. The device has a maximum continuous drain current of 11.1 A at 150°C, a drain-source on-state resistance of 0.50 Ω at 25°C, and agate charge of 18.7 nC. It supports a pulsed drain current of 24 A, an avalanche energy of 129 mJ, and a gate-source voltage rating of ±20 V. Thermal resistance from junction to case is 4.46 °C/W, and junction temperature ranges from -40°C to 150°C. It is qualified for standard grade applications and features Pb-free plating and a halogen-free mold compound.
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
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MOSFET N-CH 500V 7.6A TO220-FP Product overview: IPA50R500CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 7.6A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 7.6A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA50R500CE can be used for catalog matching and distributor lookup.
N-Channel 500V 7.6A (Tc) 28W (Tc) Through Hole PG-TO220-3-31
MOSFET N-CH 500V 7.6A TO220-FP
MOSFET N-CH 500V 7.6A TO220-FP
| Infineon Technologies AG | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPA50R500CE | 278-IPA50R500CE | IPA50R500CEIN-ND | IPA50R500CE | IPA50R500CE |
| Product Name | 500V-950V N-Channel Power MOSFET | 500V 7.6A TO220 MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N | N-Channel | N-Channel; N-Channel | ||
| Transistor Technology / Material | Si/SiC | MOSFET (Metal Oxide) | |||
| rDS(on) | 0.5000 ohms | ||||
| QG | 18.7 nC | ||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
