Infineon Technologies AG IPB03N03LBG

Description
OptlMOS N-Channel Power MOSFET
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Description
OptlMOS N-Channel Power MOSFET
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Datasheet
Datasheet Summary
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The IPB03N03LA G is an N-channel logic-level MOSFET in a PG-TO263-3-2 package, designed for high-frequency dc/dc converters. It has a drain-source voltage rating of 25 V, continuous drain current of 80 A, and a maximum on-resistance of 2.7 mΩ at V_GS = 10 V. The device supports an operating temperature up to 175 °C and has a thermal resistance from junction to case of 1 K/W. It meets IEC 68-1 climatic category 55/175/56 and is RoHS compliant. The part is qualified according to JEDEC standards for target applications.

Datasheet Summary
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The IPB03N03LA G is an N-channel logic-level MOSFET in a PG-TO263-3-2 package, designed for high-frequency dc/dc converters. It has a drain-source voltage rating of 25 V, continuous drain current of 80 A, and a maximum on-resistance of 2.7 mΩ at V_GS = 10 V. The device supports an operating temperature up to 175 °C and has a thermal resistance from junction to case of 1 K/W. It meets IEC 68-1 climatic category 55/175/56 and is RoHS compliant. The part is qualified according to JEDEC standards for target applications.

Suppliers

Company
Product
Description
Supplier Links
 - IPB03N03LBG - Rochester Electronics
Newburyport, MA, United States
OptlMOS N-Channel Power MOSFET

OptlMOS N-Channel Power MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number IPB03N03LBG
Polarity N-Channel
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