The IPD053N06N is an N-channel power MOSFET optimized for high-performance switched-mode power supplies, particularly synchronous rectification. It is packaged in a PG-TO252-3 case with a maximum continuous drain current of 45 A and a drain-source on-state resistance of 5.3 mΩ at 10 V gate voltage. The device has a drain-source breakdown voltage of 60 V, a gate-source voltage rating of ±20 V, and is rated for operation from -55 °C to 175 °C. It is 100% avalanche tested with a single-pulse avalanche energy of 60 mJ at 45 A, and its thermal resistance from junction to case is 1.8 K/W. The part is RoHS compliant and halogen-free according to IEC 61249-2-21.
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Summary of Features
Benefits
Potential Applications
Applications
MOSFET N-Channel 60V 45A OptiMOS TO252
MOSFET N-Channel 60V 45A OptiMOS TO252
MOSFET N-Channel 60V 45A OptiMOS TO252
60V 18A 5.3mΩ@10V,45A 3W 2.8V@36uA 1 N-Channel TO-252-3 MOSFETs ROHS
| Infineon Technologies AG | RS Components, Ltd. | RS Components, Ltd. | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors |
| Product Number | IPD053N06N | 9064491 | 9064491P | IPD053N06N | IPD053N06N |
| Product Name | N-Channel Power MOSFET | MOSFETs | MOSFETs | MOSFET | Transistors |
| Polarity | N-Channel; N | N-Channel | N-Channel | ||
| Transistor Technology / Material | Si/SiC | ||||
| rDS(on) | 0.0053 ohms | ||||
| TJ | -55 to 175 C (-67 to 347 F) |
