Power Field-Effect Transistor
N-Channel 900V 5.1A (Tc) 31W (Tc) Through Hole PG-TO220-FP
MOSFET N-CH 900V 5.1A TO220
MOSFET, N-CH, 900V, 5.1A, 150DEG C, 31W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.94ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Rochester Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA90R1K2C3XKSA2 | 448-IPA90R1K2C3XKSA2-ND | IPA90R1K2C3XKSA2 | 02AH6888 | IPA90R1K2C3XKSA2 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 900V, 5.1A, 150Deg C, 31W; Transistor Polarity Infineon | MOSFET | |
| Package Type | PG-TO220-3 | TO-220; TO-220-3 Full Pack | TO-220; TO-220-3 Full Pack | TO-3 |
