Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB65R190C7

Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
  • 500V-950V N-Channel Power MOSFET - IPB65R190C7 - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPB65R190C7 - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
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Datasheet
Datasheet Summary
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The IPB65R190C7 is a 650V CoolMOS™ C7 superjunction MOSFET in a D²PAK (PG-TO 263) package, designed for high-efficiency power conversion in applications such as PFC, server, telecom, UPS, and solar systems. It has a maximum drain-source on-state resistance of 190 mΩ, a pulsed drain current of 49 A, and a total gate charge of 23 nC. The device features improved dv/dt ruggedness, low output capacitance energy (Eoss = 2.7 µJ at 400 V), and is qualified for industrial-grade applications according to JEDEC J-STD-020 and JESD22 standards. Thermal resistance from junction to case is 1.73 °C/W, and the operating junction temperature ranges from -55 °C to 150 °C. The package is Pb-free and uses a halogen-free mold compound.

Datasheet Summary
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The IPB65R190C7 is a 650V CoolMOS™ C7 superjunction MOSFET in a D²PAK (PG-TO 263) package, designed for high-efficiency power conversion in applications such as PFC, server, telecom, UPS, and solar systems. It has a maximum drain-source on-state resistance of 190 mΩ, a pulsed drain current of 49 A, and a total gate charge of 23 nC. The device features improved dv/dt ruggedness, low output capacitance energy (Eoss = 2.7 µJ at 400 V), and is qualified for industrial-grade applications according to JEDEC J-STD-020 and JESD22 standards. Thermal resistance from junction to case is 1.73 °C/W, and the operating junction temperature ranges from -55 °C to 150 °C. The package is Pb-free and uses a halogen-free mold compound.

Suppliers

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Product
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Supplier Links
500V-950V N-Channel Power MOSFET - IPB65R190C7 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPB65R190C7
500V-950V N-Channel Power MOSFET IPB65R190C7
Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features 650V voltage Revolutionary best-in-class R DS(on)/package Reduced energy stored in output capacitance (Eoss) Lower gate charge Qg Space saving through use of smaller packages or reduction of parts 12 years manufacturing experience in superjunction technology Benefits Improved safety margin and suitable for both SMPS and solar inverter applications Lowest conduction losses/package Low switching losses Better light load efficiency Increasing power density Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar PC power EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview

Infineon’s CoolMOS™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.


Summary of Features

  • 650V voltage
  • Revolutionary best-in-class R DS(on)/package
  • Reduced energy stored in output capacitance (Eoss)
  • Lower gate charge Qg
  • Space saving through use of smaller packages or reduction of parts
  • 12 years manufacturing experience in superjunction technology

Benefits

  • Improved safety margin and suitable for both SMPS and solar inverter applications
  • Lowest conduction losses/package
  • Low switching losses
  • Better light load efficiency
  • Increasing power density
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • PC power

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Supplier's Site Datasheet
Transistors - IPB65R190C7 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB65R190C7
Transistors IPB65R190C7
TO-263 MOSFETs ROHS

TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPB65R190C7 IPB65R190C7
Product Name 500V-950V N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1900 ohms
QG 23 nC
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