Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features
Efficiency
600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Ease-of-use
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Benefits
Efficiency
Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use
Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications
Potential Applications
TV power supply
Industrial SMPS
Server
Telecom
Lighting
Designers who used this product also designed with
1ED44171N01B | Gate driver ICs
1EDI20I12MF | Gate driver ICs
2ED2184S06F | Gate driver ICs
2EDB8259Y | Gate driver ICs
IRS4427S | Gate driver ICs
1ED3120MC12H | Gate driver ICs
1ED44171N01B | Gate driver ICs
1EDI20I12MF | Gate driver ICs
2ED2184S06F | Gate driver ICs
2EDB8259Y | Gate driver ICs
IRS4427S | Gate driver ICs
1ED3120MC12H | Gate driver ICs
1ED44171N01B | Gate driver ICs
1EDI20I12MF | Gate driver ICs
1 2
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features
Efficiency
- 600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG
Ease-of-use
- ESD ruggedness of ≥ 2kV (HBM class 2)
- Integrated gate resistor RG
- Rugged body diode
- Wide portfolio in through hole and surface mount packages
- Both standard grade and industrial grade parts are available
Benefits
Efficiency
- Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency
Ease-of-use
- Ease-of-use in manufacturing environments by stopping ESD failures occurring
- Integrated RG reduces MOSFET oscillation sensitivity
- MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
- Excellent ruggedness during hard commutation of the body diode seen in LLC topology
- Suitable for a wide variety of end applications and output powers
- Parts available suitable for consumer and industrial applications
Potential Applications
- TV power supply
- Industrial SMPS
- Server
- Telecom
- Lighting
Designers who used this product also designed with
- 1ED44171N01B |
Gate driver ICs
- 1EDI20I12MF |
Gate driver ICs
- 2ED2184S06F |
Gate driver ICs
- 2EDB8259Y |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 1ED3120MC12H |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 1EDI20I12MF |
Gate driver ICs
- 2ED2184S06F |
Gate driver ICs
- 2EDB8259Y |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- 1ED3120MC12H |
Gate driver ICs
- 1ED44171N01B |
Gate driver ICs
- 1EDI20I12MF |
Gate driver ICs
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