The IPA60R600P7S is a 600 V CoolMOS™ P7 power MOSFET designed for high-efficiency switching applications such as PFC, LLC, and PWM stages. It is packaged in a PG-TO-220 FullPAK with dimensions of 15.67 mm to 16.15 mm in length, 10.00 mm to 10.65 mm in width, and 28.70 mm to 29.75 mm in height. The device features a maximum on-state resistance of 600 mΩ at 25 °C, a pulsed drain current of 16 A, and an avalanche energy rating of 17 mJ. It exhibits ESD robustness exceeding 2 kV (HBM), a body diode commutation speed of 900 A/µs, and low switching and conduction losses. The MOSFET is qualified according to JEDEC standards and meets thermal performance with a junction-to-case thermal resistance of 5.98 °C/W and a maximum operating junction temperature of 150 °C.
Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use
The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Summary of Features
Efficiency
Ease-of-use
Benefits
Efficiency
Ease-of-use
Potential Applications
Designers who used this product also designed with
1
2
Category: OEM Souring
Win Source Part Number: 1463519-IPA60R600P7S
Manufacturer: Infineon Technologies
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA60R600P7S | 1463519-IPA60R600P7S |
| Product Name | 500V-950V N-Channel Power MOSFET | OEM Souring |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.6000 ohms | |
| QG | 9 nC |
