Infineon Technologies AG N-Channel Power MOSFET IPB033N10N5LF

Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. Summary of Features Combination of low R DS(on) and wide safe operating area (SOA) High max. pulse current High continuous pulse current Benefits Rugged linear mode operation Low conduction losses Higher in-rush current enabled for faster start-up and shorter down time Potential Applications Telecom Battery management Applications 48 V intermediate bus converter (IBC) DIN rail power supplies Industrial robots system solutions for Industry 4.0 Light electric vehicles (LEV) Designers who used this product also designed with IR3889MTRPBF | Integrated POL Voltage Regulators 1EDN7512B | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA38840 | Integrated POL Voltage Regulators SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module XDPE12284C-0000 | Digital Multiphase Controllers IR3889MTRPBF | Integrated POL Voltage Regulators 1EDN7512B | Gate driver ICs 2ED2110S06M | Gate driver ICs IRS10752L | Gate driver ICs TDA21535 | Integrated Smart Power Stages TDA38840 | Integrated POL Voltage Regulators SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module XDPE12284C-0000 | Digital Multiphase Controllers 1 2