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Infineon Technologies AG N-Channel Power MOSFET IPB033N10N5LF

Description
Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. Summary of Features Combination of low R DS(on) and wide safe operating area (SOA) High max. pulse current High continuous pulse current Benefits Rugged linear mode operation Low conduction losses Higher in-rush current enabled for faster start-up and shorter down time Potential Applications Telecom Battery management Applications 48 V power distribution DIN rail power supplies Industrial robots system solutions for Industry 4.0 Trusted semiconductor solutions for light electric vehicles (LEV) Designers who used this product also designed with IRS21271S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs TDA21590 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages IPB020N10N5LF | N-Channel Power MOSFET TDA21490 | Integrated Smart Power Stages TDA38840 | Integrated POL Voltage Regulators XDPE15284D-0000 | Digital Multiphase Controllers IR3889MTRPBF | Integrated POL Voltage Regulators SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module XDPE12284C-0000 | Digital Multiphase Controllers BSC360N15NS3 G | N-Channel Power MOSFET 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS21271S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs TDA21590 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages IPB020N10N5LF | N-Channel Power MOSFET TDA21490 | Integrated Smart Power Stages 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPB033N10N5LF - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB033N10N5LF
N-Channel Power MOSFET IPB033N10N5LF
Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. Summary of Features Combination of low R DS(on) and wide safe operating area (SOA) High max. pulse current High continuous pulse current Benefits Rugged linear mode operation Low conduction losses Higher in-rush current enabled for faster start-up and shorter down time Potential Applications Telecom Battery management Applications 48 V power distribution DIN rail power supplies Industrial robots system solutions for Industry 4.0 Trusted semiconductor solutions for light electric vehicles (LEV) Designers who used this product also designed with IRS21271S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs TDA21590 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages IPB020N10N5LF | N-Channel Power MOSFET TDA21490 | Integrated Smart Power Stages TDA38840 | Integrated POL Voltage Regulators XDPE15284D-0000 | Digital Multiphase Controllers IR3889MTRPBF | Integrated POL Voltage Regulators SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module XDPE12284C-0000 | Digital Multiphase Controllers BSC360N15NS3 G | N-Channel Power MOSFET 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS21271S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs TDA21590 | Integrated Smart Power Stages TDA21535 | Integrated Smart Power Stages IPB020N10N5LF | N-Channel Power MOSFET TDA21490 | Integrated Smart Power Stages 1 2 3 4 5

Combining a low RDS(on) with a wide safe operating area (SOA)

OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.


Summary of Features

  • Combination of low R DS(on) and wide safe operating area (SOA)
  • High max. pulse current
  • High continuous pulse current

Benefits

  • Rugged linear mode operation
  • Low conduction losses
  • Higher in-rush current enabled for faster start-up and shorter down time

Potential Applications

  • Telecom
  • Battery management

Applications

  • 48 V power distribution
  • DIN rail power supplies
  • Industrial robots system solutions for Industry 4.0
  • Trusted semiconductor solutions for light electric vehicles (LEV)

Designers who used this product also designed with


  • IRS21271S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • TDA21590 |
    Integrated Smart Power Stages
  • TDA21535 |
    Integrated Smart Power Stages
  • IPB020N10N5LF |
    N-Channel Power MOSFET
  • TDA21490 |
    Integrated Smart Power Stages
  • TDA38840 |
    Integrated POL Voltage Regulators
  • XDPE15284D-0000 |
    Digital Multiphase Controllers
  • IR3889MTRPBF |
    Integrated POL Voltage Regulators
  • SLB 9670VQ2.0 |
    OPTIGA™ TPM - Trusted Platform Module
  • XDPE12284C-0000 |
    Digital Multiphase Controllers
  • BSC360N15NS3 G |
    N-Channel Power MOSFET
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • TDA21590 |
    Integrated Smart Power Stages
  • TDA21535 |
    Integrated Smart Power Stages
  • IPB020N10N5LF |
    N-Channel Power MOSFET
  • TDA21490 |
    Integrated Smart Power Stages

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB033N10N5LF
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0033 ohms
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