Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R180C7

Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Automotive USB power delivery - Head unit Cordless power tools and outdoor power equipment Mobile devices and smartphones Power conversion EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
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Description
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Automotive USB power delivery - Head unit Cordless power tools and outdoor power equipment Mobile devices and smartphones Power conversion EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview
Request a Quote Datasheet

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500V-950V N-Channel Power MOSFET - IPD60R180C7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD60R180C7
500V-950V N-Channel Power MOSFET IPD60R180C7
CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss. Summary of Features Reduced switching loss parameters such as Q G, C oss, E oss Best-in-class figure of merit Q G*R DS(on) Increased switching frequency Best R (on)*A in the world Rugged body diode Benefits Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies Potential Applications Server Telecom PC power Solar Industrial USB-PD Applications 48 V intermediate bus converter (IBC) Automotive USB power delivery - Head unit Cordless power tools and outdoor power equipment Mobile devices and smartphones Power conversion EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview

CoolMOS™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies

The 600V CoolMOS C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.


Summary of Features

  • Reduced switching loss parameters such as Q G, C oss, E oss
  • Best-in-class figure of merit Q G*R DS(on)
  • Increased switching frequency
  • Best R (on)*A in the world
  • Rugged body diode

Benefits

  • Enables increasing switching frequency without loss in efficiency
  • Measure showing key parameter for light load and full load efficiency
  • Doubling the switching frequency will half the size of magnetic components
  • Smaller packages for same R DS(on)
  • Can be used in many more positions for both hard and soft switching topologies

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Industrial
  • USB-PD

Applications

  • 48 V intermediate bus converter (IBC)
  • Automotive USB power delivery - Head unit
  • Cordless power tools and outdoor power equipment
  • Mobile devices and smartphones
  • Power conversion

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPD60R180C7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1800 ohms
QG 24 nC
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