The IPD033N06N is an N-channel MOSFET designed for synchronous rectification in power electronics. It is packaged in a PG-TO252-3 (D-PAK) case with a drain-source breakdown voltage of 60 V, a maximum continuous drain current of 90 A, and a maximum on-state resistance of 3.5 mΩ at 25 °C. The device is qualified according to JEDEC standards, RoHS compliant, and halogen-free according to IEC 61249-2-21. It supports avalanche energy up to 60 mJ and has a gate charge total of 44 nC. Thermal resistance from junction to case is 0.8 to 1.4 K/W, and it operates from -55 °C to 175 °C.
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet chargers. In addition, these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPD033N06N |
| Product Name | N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0033 ohms |
