Infineon Technologies AG N-Channel Power MOSFET IPA083N10N5

Description
OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on)reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications Complete system solutions for smart TVs Designers who used this product also designed with IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS4427S | Gate driver ICs IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs 2EDN8534F | Gate driver ICs IPA60R120P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRS21271S | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS4427S | Gate driver ICs IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs 2EDN8534F | Gate driver ICs 1 2 3
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Description
OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on)reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications Complete system solutions for smart TVs Designers who used this product also designed with IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS4427S | Gate driver ICs IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs 2EDN8534F | Gate driver ICs IPA60R120P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRS21271S | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS4427S | Gate driver ICs IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs 2EDN8534F | Gate driver ICs 1 2 3
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Suppliers

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N-Channel Power MOSFET - IPA083N10N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPA083N10N5
N-Channel Power MOSFET IPA083N10N5
OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on)reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Applications Complete system solutions for smart TVs Designers who used this product also designed with IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS4427S | Gate driver ICs IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs 2EDN8534F | Gate driver ICs IPA60R120P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA65R110CFD | 500V-950V CoolMOS™ N-Channel Power MOSFET IRS21271S | Gate driver ICs 2EDL8033G4B | Gate driver ICs IRS10752L | Gate driver ICs 1ED44173N01B | Gate driver ICs 6ED2742S01Q | Gate driver ICs IRS4427S | Gate driver ICs IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs 2EDN8534F | Gate driver ICs 1 2 3

OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package

Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on)reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Applications

  • Complete system solutions for smart TVs

Designers who used this product also designed with


  • IRS10752L |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IPA60R180P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMW65R048M1H |
    Silicon Carbide MOSFET Discretes
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • 2EDN8534F |
    Gate driver ICs
  • IPA60R120P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPA65R110CFD |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRS21271S |
    Gate driver ICs
  • 2EDL8033G4B |
    Gate driver ICs
  • IRS10752L |
    Gate driver ICs
  • 1ED44173N01B |
    Gate driver ICs
  • 6ED2742S01Q |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IPA60R180P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IMW65R048M1H |
    Silicon Carbide MOSFET Discretes
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • 2EDN8534F |
    Gate driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPA083N10N5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0083 ohms
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