OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
Summary of Features
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
RDS(on)reduction of up to 43% from previous generation
Benefits
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
Potential Applications
Telecom
Server
Solar
Low voltage drives
Light electric vehicles
Adapter
Applications
Complete system solutions for smart TVs
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IRS10752L | Gate driver ICs
1ED44173N01B | Gate driver ICs
6ED2742S01Q | Gate driver ICs
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IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET
IMW65R048M1H | Silicon Carbide MOSFET Discretes
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OptiMOS™ 5 power MOSFET 100 V in a TO-220 FullPAK package
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
Summary of Features
- Optimized for synchronous rectification
- Ideal for high switching frequency
- Output capacitance reduction of up to 44%
- RDS(on)reduction of up to 43% from previous generation
Benefits
- Highest system efficiency
- Reduced switching and conduction losses
- Less paralleling required
- Increased power density
- Low voltage overshoot
Potential Applications
- Telecom
- Server
- Solar
- Low voltage drives
- Light electric vehicles
- Adapter
Applications
- Complete system solutions for smart TVs
Designers who used this product also designed with
- IRS10752L |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- 6ED2742S01Q |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- IPA60R180P7S |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IMW65R048M1H |
Silicon Carbide MOSFET Discretes
- ICE3PCS03G |
PFC-CCM (continuous conduction mode) ICs
- 2EDN8534F |
Gate driver ICs
- IPA60R120P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPA65R110CFD |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IRS21271S |
Gate driver ICs
- 2EDL8033G4B |
Gate driver ICs
- IRS10752L |
Gate driver ICs
- 1ED44173N01B |
Gate driver ICs
- 6ED2742S01Q |
Gate driver ICs
- IRS4427S |
Gate driver ICs
- IPA60R180P7S |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IMW65R048M1H |
Silicon Carbide MOSFET Discretes
- ICE3PCS03G |
PFC-CCM (continuous conduction mode) ICs
- 2EDN8534F |
Gate driver ICs
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