Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB095N20NM6 IPB095N20NM6

Description
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Summary of Features Industries lowest RDS(on) in 200 V Industries lowest Qrr in 200 V Compared to previous 200 V technology Up to 42% lower RDS(on) Up to 89% lower Qrr(typ) 36% lower FOMg More than 3 times softer diode Improved capacitance linearity Improved SOA Tight Vgs(th) spread of +/- 750 mV High avalanche ruggedness Max Tj of 175°C and MSL1 Benefits Low conduction and switching losses Stable operation with improved EMI Better current sharing when paralleling Enhanced robustness Improved system reliability Applications Audio amplifier solutions Industrial and consumer BMS Motor Control Power conversion Renewables
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Description
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Summary of Features Industries lowest RDS(on) in 200 V Industries lowest Qrr in 200 V Compared to previous 200 V technology Up to 42% lower RDS(on) Up to 89% lower Qrr(typ) 36% lower FOMg More than 3 times softer diode Improved capacitance linearity Improved SOA Tight Vgs(th) spread of +/- 750 mV High avalanche ruggedness Max Tj of 175°C and MSL1 Benefits Low conduction and switching losses Stable operation with improved EMI Better current sharing when paralleling Enhanced robustness Improved system reliability Applications Audio amplifier solutions Industrial and consumer BMS Motor Control Power conversion Renewables
Request a Quote Datasheet

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB095N20NM6 - IPB095N20NM6 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB095N20NM6
IPB095N20NM6
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB095N20NM6 IPB095N20NM6
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Summary of Features Industries lowest RDS(on) in 200 V Industries lowest Qrr in 200 V Compared to previous 200 V technology Up to 42% lower RDS(on) Up to 89% lower Qrr(typ) 36% lower FOMg More than 3 times softer diode Improved capacitance linearity Improved SOA Tight Vgs(th) spread of +/- 750 mV High avalanche ruggedness Max Tj of 175°C and MSL1 Benefits Low conduction and switching losses Stable operation with improved EMI Better current sharing when paralleling Enhanced robustness Improved system reliability Applications Audio amplifier solutions Industrial and consumer BMS Motor Control Power conversion Renewables

OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package

IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products.

The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications.


Summary of Features

  • Industries lowest RDS(on) in 200 V
  • Industries lowest Qrr in 200 V
  • Compared to previous 200 V technology
  • Up to 42% lower RDS(on)
  • Up to 89% lower Qrr(typ)
  • 36% lower FOMg
  • More than 3 times softer diode
  • Improved capacitance linearity
  • Improved SOA
  • Tight Vgs(th) spread of +/- 750 mV
  • High avalanche ruggedness
  • Max Tj of 175°C and MSL1

Benefits

  • Low conduction and switching losses
  • Stable operation with improved EMI
  • Better current sharing when paralleling
  • Enhanced robustness
  • Improved system reliability

Applications

  • Audio amplifier solutions
  • Industrial and consumer BMS
  • Motor Control
  • Power conversion
  • Renewables
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB095N20NM6
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB095N20NM6
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0095 ohms
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