IPB095N20NM6 is an N-channel MOSFET designed for power switching applications, featuring a 200 V drain-source breakdown voltage, a maximum continuous drain current of 116 A, and a minimum on-resistance of 9.5 mΩ at 10 V gate-source voltage. It is packaged in a PG-TO263-3 (D²PAK) surface-mount case with dimensions specified as 9.05-9.45 mm in length, 9.80-10.20 mm in width, and 14.60-15.90 mm in height. The device operates at junction temperatures up to 175°C, is rated for 100% avalanche testing, and meets RoHS compliance with halogen-free materials per IEC 61249-2-21. It is qualified for industrial applications per JEDEC standards, with a thermal resistance from junction to case of 0.39-0.5 °C/W and MSL 1 moisture sensitivity classification. The gate charge is 53-66 nC, and reverse recovery charge is 307-614 nC under 1000 A/μs switching conditions.
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package
IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products.
The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications.
Summary of Features
Benefits
Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB095N20NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB095N20NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0095 ohms |
