Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB043N10NF2S IPB043N10NF2S

Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles Applications Energy Storage Systems
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB043N10NF2S - IPB043N10NF2S - Infineon Technologies AG
    Infineon Technologies AG
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Description
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles Applications Energy Storage Systems
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Datasheet
Datasheet Summary
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IPB043N10NF2S is a 100 V N-channel MOSFET in a D²PAK (PG-TO263-3) package, designed for power conversion applications requiring high current and low on-state resistance. It has a maximum drain-source on-state resistance of 4.35 mΩ at 25 °C, a continuous drain current of 135 A, and a pulsed drain current of 540 A. The device is avalanche-tested with a single-pulse energy rating of 105 mJ and operates with a junction temperature range of -55 °C to 175 °C. It is RoHS compliant and halogen-free according to IEC 61249-2-21.

Datasheet Summary
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IPB043N10NF2S is a 100 V N-channel MOSFET in a D²PAK (PG-TO263-3) package, designed for power conversion applications requiring high current and low on-state resistance. It has a maximum drain-source on-state resistance of 4.35 mΩ at 25 °C, a continuous drain current of 135 A, and a pulsed drain current of 540 A. The device is avalanche-tested with a single-pulse energy rating of 105 mJ and operates with a junction temperature range of -55 °C to 175 °C. It is RoHS compliant and halogen-free according to IEC 61249-2-21.

Suppliers

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB043N10NF2S - IPB043N10NF2S - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB043N10NF2S
IPB043N10NF2S
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB043N10NF2S IPB043N10NF2S
StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features Broad availability from distribution partners Excellent price/performance ratio Ideal for high- and low- switching frequency Industry standard footprint package High current rating Benefits Multi-vendor compatibility Right-fit products Supports a wide variety of applications Standard pinout allows for drop-in replacement Increased current carrying capability Potential Applications Power management (SMPS) Adapter Motor drives Battery powered applications Battery management UPS Light electric vehicles Applications Energy Storage Systems

StrongIRFET™ 2 single N-channel power MOSFET 100 V in D²PAK package

Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 4.3 mOhm, addressing a broad range of applications from low- to high-switching frequency.


Summary of Features

  • Broad availability from distribution partners
  • Excellent price/performance ratio
  • Ideal for high- and low- switching frequency
  • Industry standard footprint package
  • High current rating

Benefits

  • Multi-vendor compatibility
  • Right-fit products
  • Supports a wide variety of applications
  • Standard pinout allows for drop-in replacement
  • Increased current carrying capability

Potential Applications

  • Power management (SMPS)
  • Adapter
  • Motor drives
  • Battery powered applications
  • Battery management
  • UPS
  • Light electric vehicles

Applications

  • Energy Storage Systems
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB043N10NF2S
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB043N10NF2S
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0043 ohms
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