Win Source Part Number: 1002304-IPA80R1K0CEX
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ CE
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -40°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001313392,2156-IPA
Base Product Number: IPA80R1
Drive Voltage (Max Rds On, Min Rds On): 10V
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 800V 5.7A (Tc) 32W (Tc) Through Hole PG-TO220-FP
MOSFET N-CH 800V 5.7A TO220-FP Product overview: IPA80R1K0CEXKSA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA80R1K0CEXKSA2
MOSFET N-CH 800V 5.7A TO220-FP
MOSFET, N-CH, 800V, 5.7A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.83ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Win Source Electronics | Rochester Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1002304-IPA80R1K0CEXKSA2 | IPA80R1K0CEXKSA2 | IPA80R1K0CEXKSA2-ND | 278-IPA80R1K0CEXKSA2 | 2583776 | IPA80R1K0CEXKSA2 | 12AC9699 | IPA80R1K0CEXKSA2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 800V 5.7A TO220 MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 5.7A, To-220Fp; Transistor Polarity Infineon | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| PD | 32000 milliwatts | 32 milliwatts | ||||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | ||||||
| Package Type | SOT3 | PG-TO22-3 | TO-220; TO-220-3 Full Pack | Tube | TO-220; TO-220 | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | |
| rDS(on) | 0.9500 ohms | 0.8300 ohms |
