Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPB60R280P6ATMA1

Description
Win Source Part Number: 1065224-IPB60R280P6A TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ P6 Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 430µA Power Dissipation (Max): 104W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHB15N50E-GE3; STB24N65M2; IPB60R299CPAATMA1; IPB50R199CPATMA1; IPB65R225C7ATMA1; STB18N60DM2IPB60R280 P6; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001364468 Base Product Number: IPB60R280 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1065224-IPB60R280P6A TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ P6 Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 430µA Power Dissipation (Max): 104W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHB15N50E-GE3; STB24N65M2; IPB60R299CPAATMA1; IPB50R199CPATMA1; IPB65R225C7ATMA1; STB18N60DM2IPB60R280 P6; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001364468 Base Product Number: IPB60R280 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1065224-IPB60R280P6ATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1065224-IPB60R280P6ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1065224-IPB60R280P6ATMA1
Win Source Part Number: 1065224-IPB60R280P6A TMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ P6 Package: Tape & Reel (TR) Standard Package: 1,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V Vgs(th) (Max) @ Id: 4.5V @ 430µA Power Dissipation (Max): 104W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3 Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHB15N50E-GE3; STB24N65M2; IPB60R299CPAATMA1; IPB50R199CPATMA1; IPB65R225C7ATMA1; STB18N60DM2IPB60R280 P6; ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP001364468 Base Product Number: IPB60R280 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1065224-IPB60R280P6ATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™ P6
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHB15N50E-GE3; STB24N65M2; IPB60R299CPAATMA1; IPB50R199CPATMA1; IPB65R225C7ATMA1; STB18N60DM2IPB60R280P6;
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001364468
Base Product Number: IPB60R280
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPB60R280P6ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPB60R280P6ATMA1TR-ND
Single FETs, MOSFETs 448-IPB60R280P6ATMA1TR-ND
N-Channel 600V 13.8A (Tc) 104W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 13.8A (Tc) 104W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPB60R280P6ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPB60R280P6ATMA1CT-ND
Single FETs, MOSFETs 448-IPB60R280P6ATMA1CT-ND
MOSFET N-CH 600V 13.8A D2PAK

MOSFET N-CH 600V 13.8A D2PAK

Buy Now Datasheet
Singapore, Singapore
600V 13.8A MOSFET Transistor
278-IPB60R280P6ATMA1
600V 13.8A MOSFET Transistor 278-IPB60R280P6ATMA1
MOSFET N-CH 600V 13.8A D2PAK Product overview: IPB60R280P6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R280P6ATMA1 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 13.8A D2PAK Product overview: IPB60R280P6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R280P6ATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - IPB60R280P6ATMA1 - Rochester Electronics
Newburyport, MA, United States
IPB60R280P6 - 600V CoolMOS P6 Power Transistor

IPB60R280P6 - 600V CoolMOS P6 Power Transistor

Supplier's Site Datasheet
MOSFET LOW POWER_PRICE/PERFORM

MOSFET LOW POWER_PRICE/PERFORM

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB60R280P6ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB60R280P6ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB60R280P6ATMA1
MOSFET N-CH 600V 13.8A D2PAK

MOSFET N-CH 600V 13.8A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1065224-IPB60R280P6ATMA1 448-IPB60R280P6ATMA1TR-ND 278-IPB60R280P6ATMA1 IPB60R280P6ATMA1 IPB60R280P6ATMA1 IPB60R280P6ATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 600V 13.8A MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
PD 104000 milliwatts 104 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) PG-TO263-3 Surface Mount
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