Win Source Part Number: 1065224-IPB60R280P6A
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P6
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.2A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 430µA
Power Dissipation (Max): 104W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHB15N50E-GE3; STB24N65M2; IPB60R299CPAATMA1; IPB50R199CPATMA1; IPB65R225C7ATMA1; STB18N60DM2IPB60R280
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP001364468
Base Product Number: IPB60R280
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 600V 13.8A (Tc) 104W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 13.8A D2PAK
MOSFET N-CH 600V 13.8A D2PAK Product overview: IPB60R280P6ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R280P6ATMA1
IPB60R280P6 - 600V CoolMOS P6 Power Transistor
MOSFET LOW POWER_PRICE/PERFORM
MOSFET N-CH 600V 13.8A D2PAK
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1065224-IPB60R280P6ATMA1 | 448-IPB60R280P6ATMA1TR-ND | 278-IPB60R280P6ATMA1 | IPB60R280P6ATMA1 | IPB60R280P6ATMA1 | IPB60R280P6ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | 600V 13.8A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| PD | 104000 milliwatts | 104 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | PG-TO263-3 | Surface Mount |