The IPA95R130PFD7 is a 950 V CoolMOS™ PFD7 superjunction N-channel MOSFET designed for resonant and hard-switching topologies in lighting and industrial SMPS applications. It is packaged in a PG-TO220 FullPAK with dimensions of 15.67 mm to 16.15 mm in length, 10.00 mm to 10.65 mm in width, and 28.70 mm to 29.75 mm in height. The device has a maximum drain-source on-state resistance of 130 mΩ, a gate charge of 141 nC, and an integrated ultra-fast body diode with a reverse recovery charge of 0.33 μC at 500 V. It supports a continuous drain current of 18.3 A at 150°C, an avalanche energy of 100 mJ, and a gate-source voltage range of −20 V to 20 V. The MOSFET meets JEDEC industrial qualification standards and includes ESD protection rated at least Class 2 (HBM).
950 V CoolMOS™ PFD7 superjunction MOSFET in TO-220-3 package
The 950 V CoolMOS™ PFD7 superjunction MOSFET (IPA95R130PFD7) complements the CoolMOS™ 7 offering for high-power lighting and industrial SMPS applications. The IPA95R130PFD7 in the TO-220-3 package features RDS(on) of 130 mΩ leading to low switching losses. The products come with an integrated fast body diode ensuring a robust device.
This product family is tailored to ultrahigh power density as well as the highest efficiency designs. The products primarily address consumer and industrial SMPS applications for PFC and LLC/LCC topologies. The 950 V CoolMOS™ PFD7 offers 60% improved Qg over CoolMOS™ C3 resulting in the reduction of driving losses and improved light- and full-load efficiency in the applications.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPA95R130PFD7 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - 500V-950V N-Channel Power MOSFET - IPA95R130PFD7 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1300 ohms |
| QG | 141 nC |
