Infineon Technologies AG N-Channel Power MOSFET IPB117N20NFD

Description
OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. Summary of Features Improved hard commutation ruggedness Optimized hard switching behavior Industry’s lowest R ds(on), Q g and Q rr RoHS compliant - halogen free Benefits Highest system reliability System cost reduction Highest efficiency and power density Easy-to-design products Potential Applications Telecom Class D audio amplifier Motor control for 48-110V systems Industrial power supplies DC-AC inverter Applications Traction
  • N-Channel Power MOSFET - IPB117N20NFD - Infineon Technologies AG
    Infineon Technologies AG
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB117N20NFD - 753690-IPB117N20NFD - Win Source Electronics
    Win Source Electronics
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Description
OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. Summary of Features Improved hard commutation ruggedness Optimized hard switching behavior Industry’s lowest R ds(on), Q g and Q rr RoHS compliant - halogen free Benefits Highest system reliability System cost reduction Highest efficiency and power density Easy-to-design products Potential Applications Telecom Class D audio amplifier Motor control for 48-110V systems Industrial power supplies DC-AC inverter Applications Traction
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Datasheet
Datasheet Summary
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The IPB117N20NFD is an N-channel power MOSFET optimized for hard commutation in high-frequency switching applications, featuring a 200 V drain-source breakdown voltage, a maximum on-resistance of 11.7 mΩ at 84 A, and an operating junction temperature up to 175 °C. It is packaged in a D²PAK (PG-TO263-3) and includes a fast recovery body diode with a reverse recovery charge of 629 nC. The device is RoHS compliant and halogen-free according to IEC61249-2-21, with qualifications per JEDEC J-STD-20 and JESD22.

Datasheet Summary
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The IPB117N20NFD is an N-channel power MOSFET optimized for hard commutation in high-frequency switching applications, featuring a 200 V drain-source breakdown voltage, a maximum on-resistance of 11.7 mΩ at 84 A, and an operating junction temperature up to 175 °C. It is packaged in a D²PAK (PG-TO263-3) and includes a fast recovery body diode with a reverse recovery charge of 629 nC. The device is RoHS compliant and halogen-free according to IEC61249-2-21, with qualifications per JEDEC J-STD-20 and JESD22.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPB117N20NFD - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB117N20NFD
N-Channel Power MOSFET IPB117N20NFD
OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. Summary of Features Improved hard commutation ruggedness Optimized hard switching behavior Industry’s lowest R ds(on), Q g and Q rr RoHS compliant - halogen free Benefits Highest system reliability System cost reduction Highest efficiency and power density Easy-to-design products Potential Applications Telecom Class D audio amplifier Motor control for 48-110V systems Industrial power supplies DC-AC inverter Applications Traction

OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.


Summary of Features

  • Improved hard commutation ruggedness
  • Optimized hard switching behavior
  • Industry’s lowest R ds(on), Q g and Q rr
  • RoHS compliant - halogen free

Benefits

  • Highest system reliability
  • System cost reduction
  • Highest efficiency and power density
  • Easy-to-design products

Potential Applications

  • Telecom
  • Class D audio amplifier
  • Motor control for 48-110V systems
  • Industrial power supplies
  • DC-AC inverter

Applications

  • Traction
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB117N20NFD - 753690-IPB117N20NFD - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB117N20NFD
753690-IPB117N20NFD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB117N20NFD 753690-IPB117N20NFD
Manufacturer: Infineon Technologies Win Source Part Number: 753690-IPB117N20NFD Manufacturer Homepage: www.infineon.com Reference case: TO-263-3 Reference Date Code: 2017+ Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 753690-IPB117N20NFD
Manufacturer Homepage: www.infineon.com
Reference case: TO-263-3
Reference Date Code: 2017+
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

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ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
200V 84A MOSFET Transistor
2088-IPB117N20NFD
200V 84A MOSFET Transistor 2088-IPB117N20NFD
MOSFETs N-Ch 200V 84A D2PAK-2 Product overview: IPB117N20NFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 84A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 84A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB117N20NFD can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 200V 84A D2PAK-2 Product overview: IPB117N20NFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 84A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 84A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB117N20NFD can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPB117N20NFD
MOSFET IPB117N20NFD
MOSFET N-Ch 200V 84A D2PAK-2

MOSFET N-Ch 200V 84A D2PAK-2

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Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB117N20NFD 753690-IPB117N20NFD 2088-IPB117N20NFD IPB117N20NFD
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB117N20NFD 200V 84A MOSFET Transistor MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0117 ohms
TJ -55 to 175 C (-67 to 347 F)
Package Type TO-263; PG-TO263-3 SOT3 Reel
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