IPB040N08NF2S is an N-channel power MOSFET in a D²PAK (PG-TO263-3) package with a maximum drain-source voltage of 80 V, a maximum continuous drain current of 188 A at 25 °C case temperature, and a drain-source on-state resistance of 4.5 mΩ at 10 V gate voltage. The device is avalanche rated with 119 mJ single-pulse energy, has a gate charge of 54 nC, and operates from -55 °C to 175 °C junction temperature. It is RoHS compliant and halogen-free according to IEC 61249-2-21, and qualified according to JEDEC standards.
StrongIRFET™ 2 single N-channel power MOSFET 80 V in D²PAK package
Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB040N08NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB040N08NF2S |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0040 ohms |
