The IPB027N10N3G is a 100 V N-channel power MOSFET in a PG-TO263-3 package, designed for high-efficiency switching applications such as synchronous rectification and DC-DC conversion. It has a maximum continuous drain current of 100 A at 25°C and a drain-source on-resistance of 2.7 mΩ at 10 V gate-source voltage and 25°C. The device operates up to 175°C junction temperature and meets AEC-Q101 qualification. It is RoHS compliant and halogen-free.
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
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MOSFET N-Ch 100V 120A D2PAK-2 OptiMOS 3
| Infineon Technologies AG | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPB027N10N3 G | IPB027N10N3 G |
| Product Name | N-Channel Power MOSFET | MOSFET |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0027 ohms |