Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA65R110CFD

Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications Complete system solutions for smart TVs EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET 1ED3120MC12H | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET 1ED3120MC12H | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2
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Description
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications Complete system solutions for smart TVs EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET 1ED3120MC12H | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET 1ED3120MC12H | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2
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Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA65R110CFD - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA65R110CFD
500V-950V N-Channel Power MOSFET IPA65R110CFD
Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications Complete system solutions for smart TVs EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET 1ED3120MC12H | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs IPA083N10N5 | N-Channel Power MOSFET 1ED3120MC12H | Gate driver ICs 2ED2110S06M | Gate driver ICs 2ED2184S06F | Gate driver ICs 1 2

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7

650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts.


Summary of Features

  • 650V technology with integrated fast body diode
  • Limited voltage overshoot during hard commutation
  • Significant Qg reduction compared to 600V CFD technology
  • Tighter RDS(on) max to RDS(on) typ window
  • Easy to design-in
  • Lower price compared to 600V CFD technology

Benefits

  • Low switching losses due to low Qrr at repetitive commutation on body diode
  • Self limiting di/dt and dv/dt
  • Low Qoss
  • Reduced turn on and turn of delay times
  • Outstanding CoolMOS™ quality

Potential Applications

  • Telecom
  • Server
  • Solar
  • HID lamp ballast
  • LED lighting
  • eMobility

Applications

  • Complete system solutions for smart TVs

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IPA083N10N5 |
    N-Channel Power MOSFET
  • 1ED3120MC12H |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs
  • 2EDB8259Y |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • IPA083N10N5 |
    N-Channel Power MOSFET
  • 1ED3120MC12H |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2ED2184S06F |
    Gate driver ICs

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R110CFD - 205215-IPA65R110CFD - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R110CFD
205215-IPA65R110CFD
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R110CFD 205215-IPA65R110CFD
Manufacturer: Infineon Technologies Win Source Part Number: 205215-IPA65R110CFD Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 34.7W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 31.2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 1.3mA Max Gate Charge: 118nC @ 10V Max Input Capacitance: 3240pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 110 mOhm @ 12.7A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 205215-IPA65R110CFD
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34.7W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 31.2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 1.3mA
Max Gate Charge: 118nC @ 10V
Max Input Capacitance: 3240pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 110 mOhm @ 12.7A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
700V 31.2A MOSFET Transistor
2088-IPA65R110CFD
700V 31.2A MOSFET Transistor 2088-IPA65R110CFD
MOSFETs N-Ch 700V 31.2A TO220FP CoolMOS CFD2 Product overview: IPA65R110CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 31.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 31.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA65R110CFD can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 700V 31.2A TO220FP CoolMOS CFD2 Product overview: IPA65R110CFD from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 700V, 31.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 700V, 31.2A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPA65R110CFD can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - IPA65R110CFD - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPA65R110CFD
Transistors IPA65R110CFD
TO-220FP-3 MOSFETs ROHS

TO-220FP-3 MOSFETs ROHS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2

MOSFET N-Ch 700V 31.2A TO220FP CoolMOS CFD2

Buy Now Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPA65R110CFD 205215-IPA65R110CFD 2088-IPA65R110CFD IPA65R110CFD IPA65R110CFD
Product Name 500V-950V N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA65R110CFD 700V 31.2A MOSFET Transistor Transistors MOSFET
Polarity N-Channel; N N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.1100 ohms
QG 118 nC
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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