IPD50R950CE is a 500V N-channel CoolMOS™ CE power transistor in a DPAK (PG-TO-252) package, designed for cost-sensitive consumer and lighting applications requiring high efficiency. It has a maximum drain-source on-state resistance of 0.95 Ω, a continuous drain current of 6.4 A at TC=150°C, and a pulsed drain current of 12.8 A. The device features low gate charge (10.5 nC), low output capacitance energy (1.28 µJ at 400V), and high dv/dt ruggedness (50 V/ns). It meets RoHS requirements with Pb-free plating and halogen-free mold compound, and is qualified for standard grade applications. Thermal resistance from junction to case is 2.35 °C/W, and junction operating temperature ranges from -55°C to 150°C.
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
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Manufacturer: Infineon Technologies
Win Source Part Number: 1186159-IPD50R950CE
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
| Infineon Technologies AG | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Power MOSFET |
| Product Number | IPD50R950CE | 1186159-IPD50R950CE |
| Product Name | 500V-950V N-Channel Power MOSFET | Electronic Surplus - IPD50R950CE |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.9500 ohms | |
| QG | 10.5 nC |