Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPB65R150CFD

Replacement for 650V CoolMOS™ CFD2 is 600V CoolMOS™ CFD7 650V CoolMOS™ CFD2 is Infineon's second generation of market leading high voltage CoolMOS™ MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. Summary of Features 650V technology with integrated fast body diode Limited voltage overshoot during hard commutation Significant Qg reduction compared to 600V CFD technology Tighter RDS(on) max to RDS(on) typ window Easy to design-in Lower price compared to 600V CFD technology Benefits Low switching losses due to low Qrr at repetitive commutation on body diode Self limiting di/dt and dv/dt Low Qoss Reduced turn on and turn of delay times Outstanding CoolMOS™ quality Potential Applications Telecom Server Solar HID lamp ballast LED lighting eMobility Applications Power transmission and distribution Designers who used this product also designed with 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 2EDB8259Y | Gate driver ICs 2EDL23N06PJ | Gate driver ICs IRS4427S | Gate driver ICs 1ED44171N01B | Gate driver ICs 1EDI20N12AF | Gate driver ICs 1EDN8511B | Gate driver ICs 1 2