Infineon Technologies AG N-Channel Power MOSFET IPB110N20N3LF

Combining a low RDS(on) with a wide safe operating area (SOA) OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET. Summary of Features Combination of low R DS(on) and wide safe operating area (SOA) High max. pulse current High continuous pulse current Benefits Rugged linear mode operation Low conduction losses Higher in-rush current enabled for faster start-up and shorter down time Potential Applications Telecom Battery management Applications Energy Storage Systems Space applications Designers who used this product also designed with CY15B102Q-SXET | F-RAM (Ferroelectric RAM) IAUC90N10S5N062 | Automotive MOSFET BSC007N04LS6 | N-Channel Power MOSFET IAUC120N04S6N006 | Automotive MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) IAUC90N10S5N062 | Automotive MOSFET BSC007N04LS6 | N-Channel Power MOSFET IAUC120N04S6N006 | Automotive MOSFET CY15B102Q-SXET | F-RAM (Ferroelectric RAM) IAUC90N10S5N062 | Automotive MOSFET BSC007N04LS6 | N-Channel Power MOSFET IAUC120N04S6N006 | Automotive MOSFET

TO-263-3 MOSFETs ROHS