The IPB110N20N3LF is an N-channel MOSFET designed for hot-swap and e-fuse applications, featuring a drain-source breakdown voltage of 200 V, a maximum on-state resistance of 11 mΩ at 10 V gate-source voltage, and a continuous drain current of 88 A. It is packaged in a PG-TO263-3 case with a maximum power dissipation of 250 W at 25°C case temperature. The device is qualified according to JEDEC standards, is RoHS compliant, and halogen-free per IEC61249-2-21. It offers a wide safe operating area and is 100% avalanche tested with single-pulse avalanche energy up to 560 mJ.
Combining a low RDS(on) with a wide safe operating area (SOA)
OptiMOS™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide safe operating area of a classic planar MOSFET.
Summary of Features
Benefits
Potential Applications
Applications
Designers who used this product also designed with
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | IPB110N20N3LF | IPB110N20N3LF |
| Product Name | N-Channel Power MOSFET | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0110 ohms |
