Infineon Technologies AG Single FETs, MOSFETs IPB60R190C6ATMA1

Description
IPB60R190 - 600V CoolMOS N-Channel Power MOSFET
Request a Quote Datasheet
Description
IPB60R190 - 600V CoolMOS N-Channel Power MOSFET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - IPB60R190C6ATMA1 - Rochester Electronics
Newburyport, MA, United States
IPB60R190 - 600V CoolMOS N-Channel Power MOSFET

IPB60R190 - 600V CoolMOS N-Channel Power MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - IPB60R190C6ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R190C6ATMA1DKR-ND
Single FETs, MOSFETs IPB60R190C6ATMA1DKR-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R190C6ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R190C6ATMA1CT-ND
Single FETs, MOSFETs IPB60R190C6ATMA1CT-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R190C6ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R190C6ATMA1TR-ND
Single FETs, MOSFETs IPB60R190C6ATMA1TR-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB60R190C6ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB60R190C6ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB60R190C6ATMA1
MOSFET N-CH 600V 20.2A D2PAK

MOSFET N-CH 600V 20.2A D2PAK

Supplier's Site
MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6

MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R190C6ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPB60R190C6ATMA1
Single FETs, MOSFETs IPB60R190C6ATMA1
MOSFET N-CH 600V 20.2A D2PAK

MOSFET N-CH 600V 20.2A D2PAK

Supplier's Site Datasheet
Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon - 30T1830 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon
30T1830
Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon 30T1830
MOSFET,N CH,600V,20.2A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET,N CH,600V,20.2A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED ODG (Origin Data Global) Newark, An Avnet Company
Product Category Power MOSFET Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB60R190C6ATMA1 IPB60R190C6ATMA1DKR-ND IPB60R190C6ATMA1 IPB60R190C6ATMA1 IPB60R190C6ATMA1 30T1830
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Single FETs, MOSFETs Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type PG-TO263-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB 1400 pF @ 100 V TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
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