Infineon Technologies AG Single FETs, MOSFETs IPB60R190C6ATMA1

Description
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3
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Description
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IPB60R190C6ATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R190C6ATMA1DKR-ND
Single FETs, MOSFETs IPB60R190C6ATMA1DKR-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R190C6ATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R190C6ATMA1CT-ND
Single FETs, MOSFETs IPB60R190C6ATMA1CT-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
Single FETs, MOSFETs - IPB60R190C6ATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPB60R190C6ATMA1TR-ND
Single FETs, MOSFETs IPB60R190C6ATMA1TR-ND
N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

N-Channel 600V 20.2A (Tc) 151W (Tc) Surface Mount PG-TO263-3

Buy Now Datasheet
 - IPB60R190C6ATMA1 - Rochester Electronics
Newburyport, MA, United States
IPB60R190 - 600V CoolMOS N-Channel Power MOSFET

IPB60R190 - 600V CoolMOS N-Channel Power MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - IPB60R190C6ATMA1 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPB60R190C6ATMA1
Single FETs, MOSFETs IPB60R190C6ATMA1
MOSFET N-CH 600V 20.2A D2PAK

MOSFET N-CH 600V 20.2A D2PAK

Supplier's Site Datasheet
Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon - 30T1830 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon
30T1830
Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon 30T1830
MOSFET,N CH,600V,20.2A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

MOSFET,N CH,600V,20.2A,TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6

MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPB60R190C6ATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPB60R190C6ATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPB60R190C6ATMA1
MOSFET N-CH 600V 20.2A D2PAK

MOSFET N-CH 600V 20.2A D2PAK

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPB60R190C6ATMA1DKR-ND IPB60R190C6ATMA1 IPB60R190C6ATMA1 30T1830 IPB60R190C6ATMA1 IPB60R190C6ATMA1
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Mosfet,n Ch,600V,20.2A,to263; Transistor Polarity Infineon MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB PG-TO263-3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3 1400 pF @ 100 V
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 600 volts
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