Win Source Part Number: 964221-IPB60R080P7AT
Category: Discrete Semiconductor Products>Transistors
Series: CoolMOS™ P7
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 11.8A, 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Power Dissipation (Max): 129W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: IPB60R080P7ATMA1TR,I
Base Product Number: IPB60R080
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 37A (Tc) 129W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 37A D2PAK
IPB60R080 - 600V CoolMOS N-Channel Power MOSFET
(PRICE/TC) MOSFET, N-CH, 600V, 37A, TO-263; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:37A; DRAIN SOURCE VOLTAGE VDS:600V; ON RESISTANCE RDS(ON):0.069OHM; RDS(ON) TEST VOLTAGE VGS:10V; THRESHOLD VOLTAGE VGS:3.5V; POWER ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
MOSFET, N-CH, 600V, 37A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:37A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 37A D2PAK
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | Rochester Electronics | Radwell International | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 964221-IPB60R080P7ATMA1 | IPB60R080P7ATMA1TR-ND | IPB60R080P7ATMA1 | 2172503 | 2172504P | IPB60R080P7ATMA1 | 108068937 | 49AC7994 | IPB60R080P7ATMA1 | IPB60R080P7ATMA1 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFETs | MOSFETs | Transistor | Mosfet, N-Ch, 600V, 37A, To-263; Transistor Polarity Infineon | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||||
| PD | 129000 milliwatts | 129000 milliwatts | ||||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||||
| Package Type | SOT3 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263; D2pak (to-263) | TO-263; TO-263 | PG-TO263-3 | TO-3; TO-263; TO-252 (DPAK) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
