Infineon Technologies AG Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - IPD380P06NM IPD380P06NM

P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg. Summary of Features VDS = -60V Wide RDS(on) range Normal Level and Logic Level availability Benefits Easy interface to MCU Improved efficiency at low loads due to low Qg Fast switching Avalanche ruggedness Potential Applications Battery Consumer Industrial automation Industrial drives Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions Solid-State Circuit Breaker Telecommunication infrastructure Designers who used this product also designed with IR38064MTRPBF | Integrated POL Voltage Regulators 2EDF7275K | Gate driver ICs IR38064MTRPBF | Integrated POL Voltage Regulators 2EDF7275K | Gate driver ICs IR38064MTRPBF | Integrated POL Voltage Regulators 2EDF7275K | Gate driver ICs