The IPD380P06NM is a P-channel MOSFET in a PG-TO 252-3 (D-PAK) package, rated for -60 V drain-source voltage and capable of continuous drain current up to -35 A. It features a maximum on-state resistance of 38 mΩ at -10 V gate-source voltage and -35 A drain current, and is avalanche rugged with a single-pulse energy rating of 559 mJ. The device operates from -55 °C to 175 °C and meets JEDEC industrial qualification standards. It is RoHS compliant and halogen-free according to IEC 61249-2-21.
P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications
OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
Summary of Features
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPD380P06NM |
| Product Name | Power - MOSFET (Si/SiC) - P-Channel Power MOSFET - IPD380P06NM |
| Polarity | P-Channel; P |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0380 ohms |
