Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPD60R145CFD7

Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications Domestic robots Designers who used this product also designed with 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs 1 2
Request a Quote Datasheet
Description
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications Domestic robots Designers who used this product also designed with 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs 1 2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPD60R145CFD7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPD60R145CFD7
500V-950V N-Channel Power MOSFET IPD60R145CFD7
Infineon’s answer to resonant high power topologies The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market. Summary of Features Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and Eoss Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness Highest reliability for resonant topologies Highest efficiency with outstanding ease-of-use/performa nce trade-off Enabling increased power density solutions Potential Applications Server, Telecom, EV-charging, SMPS, PC power Applications Domestic robots Designers who used this product also designed with 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs IRS4427S | Gate driver ICs 1ED3121MC12H | Gate driver ICs 1EDN8511B | Gate driver ICs 2ED2110S06M | Gate driver ICs 2EDR8259X | Gate driver ICs 6EDL04N06PT | Gate driver ICs 1 2

Infineon’s answer to resonant high power topologies

The 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.


Summary of Features

  • Ultra-fast body diode
  • Best-in-class reverse recovery charge (Qrr)
  • Improved reverse diode dv/dt and dif/dt ruggedness
  • Lowest FOM RDS(on) x Qg and Eoss
  • Best-in-class RDS(on)/package combinations

Benefits

  • Best-in-class hard commutation ruggedness
  • Highest reliability for resonant topologies
  • Highest efficiency with outstanding ease-of-use/performance trade-off
  • Enabling increased power density solutions

Potential Applications

Server, Telecom, EV-charging, SMPS, PC power


Applications

  • Domestic robots

Designers who used this product also designed with


  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3121MC12H |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs
  • IRS4427S |
    Gate driver ICs
  • 1ED3121MC12H |
    Gate driver ICs
  • 1EDN8511B |
    Gate driver ICs
  • 2ED2110S06M |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 6EDL04N06PT |
    Gate driver ICs

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Supplier's Site Datasheet
MOSFET Transistor 2045-IPD60R145CFD7
MOSFETs HIGH POWER_NEW Product overview: IPD60R145CFD7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2045-IPD60R145CFD7 can be used for catalog matching and distributor lookup.

MOSFETs HIGH POWER_NEW Product overview: IPD60R145CFD7 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2045-IPD60R145CFD7 can be used for catalog matching and distributor lookup.

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPD60R145CFD7 2045-IPD60R145CFD7
Product Name 500V-950V N-Channel Power MOSFET MOSFET Transistor
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1450 ohms
QG 31 nC
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