MOSFET N-CH 80V 80A TO263-3 Product overview: IPB80N08S406ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80N08S406ATMA
N-Channel 80V 80A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2
Win Source Part Number: 1065230-IPB80N08S406
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, OptiMOS™
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Power Dissipation (Max): 150W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
Alternative Parts (Cross-Reference): IPB049N08N5ATMA1; STH145N8F7-2AG; STH140N8F7-2; IPB050N06NGATMA1; IRFS7762TRLPBF; STB100N6F7;
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: INFINFIPB80N08S406AT
Base Product Number: IPB80N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
OptlMOS N-Channel Power MOSFET
MOSFET N-CH 80V 80A TO263-3
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB80N08S406ATMA1 | IPB80N08S406ATMA1-ND | 1065230-IPB80N08S406ATMA1 | IPB80N08S406ATMA1 | IPB80N08S406ATMA1 | IPB80N08S406ATMA1 |
| Product Name | 80V 80A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | |
| PD | 150000 milliwatts | 150000 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | ||||
| Package Type | Tape & Reel (TR) | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | SOT3 | TO-263; TO-263-3, D2PAK | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
