MOSFET N-CH 600V 7A TO220-FP Product overview: IPA60R650CEXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R650CEXKSA1
N-Channel 600V 7A (Tc) 28W (Tc) Through Hole PG-TO220-FP
Manufacturer: Infineon Technologies
Win Source Part Number: 776836-IPA60R650CEXK
Series: CoolMOS CE
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -40°C ~ 150°C (TJ)
Package: TO-220-3 Full Pack
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Family Name: IPA60R650CE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: PG-TO-220-FP
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 3.5V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs: 20.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 440pF @ 100V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 28W (Tc)
Rds On (Maximum) @ Id, Vgs: 650 mOhm @ 2.4A, 10V
Alternative Parts (Cross-Reference): FCPF600N60Z; TK5A60W(S4VX,M); 2SK4111(Q); 2SK4015(STA4,Q);
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Power Field-Effect Transistor, 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-Ch 600V 7A TO220FP-3
MOSFET N-CH 600V 7A TO220-FP
MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 7A TO220-FP
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPA60R650CEXKSA1 | IPA60R650CEXKSA1-ND | 776836-IPA60R650CEXKSA1 | IPA60R650CEXKSA1 | IPA60R650CEXKSA1 | IPA60R650CEXKSA1 | 12AC9696 | IPA60R650CEXKSA1 |
| Product Name | 600V 7A TO220 MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R650CEXKSA1 | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 9.9A, To-220Fp; Transistor Polarity Infineon | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| PD | 28 milliwatts | 28000 milliwatts | 28000 milliwatts | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
