The IPB60R160P6 is a 600V CoolMOS™ P6 power transistor in a PG-TO-263 package, designed for high-efficiency switching applications such as PFC, PWM, and resonant converters. It features a maximum drain-source on-state resistance of 160 mΩ, a typical gate charge of 44 nC, and a pulsed drain current of 68 A. The device offers high dv/dt ruggedness up to 100 V/ns and complies with JEDEC standards for industrial-grade applications. Its body diode supports a maximum commutation speed of 500 A/µs. Thermal resistance from junction to case is 0.71 °C/W, and operating junction temperature ranges from -55 °C to 150 °C.
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.
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| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB60R160P6 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.1600 ohms |
| QG | 44 nC |
