Infineon Technologies AG N-Channel Power MOSFET IPD600N25N3 G

Description
Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary of Features Industry’s lowest R DS(on) Lowest Q g and Q gd World’s lowest FOM RoHS comliant − halogen free MSL 1 rated Benefits Highest efficiency Highest Power density Lowest board space consumption Minimal device paralleling required System cost improvement Enviromentally friendly Easy-to-design-in products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48V–110V systems Isolated DC-DC converters Lighting for 110V AC networks HID lamps Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Automotive USB power delivery - Head unit Light electric vehicles (LEV) Smart speaker designs
  • N-Channel Power MOSFET - IPD600N25N3 G - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPD600N25N3 G - ODG (Origin Data Global)
    ODG (Origin Data Global)
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Description
Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary of Features Industry’s lowest R DS(on) Lowest Q g and Q gd World’s lowest FOM RoHS comliant − halogen free MSL 1 rated Benefits Highest efficiency Highest Power density Lowest board space consumption Minimal device paralleling required System cost improvement Enviromentally friendly Easy-to-design-in products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48V–110V systems Isolated DC-DC converters Lighting for 110V AC networks HID lamps Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Automotive USB power delivery - Head unit Light electric vehicles (LEV) Smart speaker designs
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Datasheet
Datasheet Summary
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The IPD600N25N3G is an N-channel power MOSFET designed for high-frequency switching and synchronous rectification, housed in a PG-TO252-3 package. It has a drain-source breakdown voltage of 250 V, a maximum continuous drain current of 25 A at 25 °C, and a maximum on-resistance of 60 mΩ at 25 °C. The device supports an operating junction temperature up to 175 °C and has a thermal resistance from junction to case of 1.1 K/W. It is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified according to JEDEC standards. The gate charge totals 22 to 29 nC, with a gate plateau voltage of 4.3 V. Avalanche energy ratings are 210 mJ at 25 A and 25 Ω. Reverse diode characteristics include a forward voltage of 0.9 to 1.2 V at 25 °C and a reverse recovery time of up to 114 ns.

Datasheet Summary
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The IPD600N25N3G is an N-channel power MOSFET designed for high-frequency switching and synchronous rectification, housed in a PG-TO252-3 package. It has a drain-source breakdown voltage of 250 V, a maximum continuous drain current of 25 A at 25 °C, and a maximum on-resistance of 60 mΩ at 25 °C. The device supports an operating junction temperature up to 175 °C and has a thermal resistance from junction to case of 1.1 K/W. It is RoHS compliant, halogen-free per IEC 61249-2-21, and qualified according to JEDEC standards. The gate charge totals 22 to 29 nC, with a gate plateau voltage of 4.3 V. Avalanche energy ratings are 210 mJ at 25 A and 25 Ω. Reverse diode characteristics include a forward voltage of 0.9 to 1.2 V at 25 °C and a reverse recovery time of up to 114 ns.

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPD600N25N3 G - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPD600N25N3 G
N-Channel Power MOSFET IPD600N25N3 G
Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary of Features Industry’s lowest R DS(on) Lowest Q g and Q gd World’s lowest FOM RoHS comliant − halogen free MSL 1 rated Benefits Highest efficiency Highest Power density Lowest board space consumption Minimal device paralleling required System cost improvement Enviromentally friendly Easy-to-design-in products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48V–110V systems Isolated DC-DC converters Lighting for 110V AC networks HID lamps Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Automotive USB power delivery - Head unit Light electric vehicles (LEV) Smart speaker designs

Infineon's 250V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.


Summary of Features

  • Industry’s lowest R DS(on)
  • Lowest Q g and Q gd
  • World’s lowest FOM RoHS comliant − halogen free MSL 1 rated

Benefits

  • Highest efficiency
  • Highest Power density
  • Lowest board space consumption
  • Minimal device paralleling required
  • System cost improvement
  • Enviromentally friendly
  • Easy-to-design-in products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48V–110V systems
  • Isolated DC-DC converters
  • Lighting for 110V AC networks
  • HID lamps
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)

Applications

  • Automotive USB power delivery - Head unit
  • Light electric vehicles (LEV)
  • Smart speaker designs
Supplier's Site Datasheet
Transistors - IPD600N25N3 G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD600N25N3 G
Transistors IPD600N25N3 G
250V 25A 60mΩ@10V,25A 136W 4V@90uA 1 N-Channel TO-252-3 MOSFETs ROHS

250V 25A 60mΩ@10V,25A 136W 4V@90uA 1 N-Channel TO-252-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ODG (Origin Data Global)
Product Category Power MOSFET Transistors
Product Number IPD600N25N3 G IPD600N25N3 G
Product Name N-Channel Power MOSFET Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0600 ohms
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