MOSFET P-CH 30V 80A TO263-3 Product overview: IPB80P03P4L04ATMA2 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 80A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 80A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB80P03P4L04ATM
Win Source Part Number: 1278384-IPB80P03P4L0
Category: Discrete Semiconductor Products>Transistors
Series: Automotive, AEC-Q101, OptiMOS®-P2
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id: 2V @ 253µA
Power Dissipation (Max): 137W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: PG-TO263-3-2
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V
Vgs (Max): +5V, -16V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 448-IPB80P03P4L04ATM
Base Product Number: IPB80P
P-Channel 30V 80A (Tc) 137W (Tc) Surface Mount PG-TO263-3-2
P-Channel 30V 80A (Tc) 137W (Tc) Surface Mount PG-TO263-3-2
P-Channel 30V 80A (Tc) 137W (Tc) Surface Mount PG-TO263-3-2
Power Field-Effect Transistor, 80A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET P-CH 30V 80A TO263-3
MOSFET, P-CH, 30V, 80A, TO-263 ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | Win Source Electronics | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Power MOSFET | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-IPB80P03P4L04ATMA2 | 2496907 | 1278384-IPB80P03P4L04ATMA2 | 448-IPB80P03P4L04ATMA2CT-ND | IPB80P03P4L04ATMA2 | IPB80P03P4L04ATMA2 | 38AJ3758 |
| Product Name | 30V 80A MOSFET Transistor | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, 30V, 80A, To-263 Rohs Compliant Infineon | |
| Polarity | P-Channel | P-Channel | P-Channel | P-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | ||||||
| PD | 137 milliwatts | ||||||
| TJ | -55 to 175 C (-67 to 347 F) |
