Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IPD25DP06NMATMA1

Description
Win Source Part Number: 1338015-IPD25DP06NMA TMA1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: OptiMOS™ Package: Tape & Reel Standard Package: 2,500 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 28W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: PG-TO252-3-313 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 37 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Base Product Number: IPD25DP06 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
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Description
Win Source Part Number: 1338015-IPD25DP06NMA TMA1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: OptiMOS™ Package: Tape & Reel Standard Package: 2,500 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 28W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: PG-TO252-3-313 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 37 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Base Product Number: IPD25DP06 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1338015-IPD25DP06NMATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1338015-IPD25DP06NMATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1338015-IPD25DP06NMATMA1
Win Source Part Number: 1338015-IPD25DP06NMA TMA1 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: OptiMOS™ Package: Tape & Reel Standard Package: 2,500 Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Power Dissipation (Max): 28W (Tc) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63 Supplier Device Package: PG-TO252-3-313 Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 175°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 37 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Base Product Number: IPD25DP06 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 270µA Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V

Win Source Part Number: 1338015-IPD25DP06NMATMA1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 2,500
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Power Dissipation (Max): 28W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab) , SC-63
Supplier Device Package: PG-TO252-3-313
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 37 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Base Product Number: IPD25DP06
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPD25DP06NMATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD25DP06NMATMA1DKR-ND
Single FETs, MOSFETs 448-IPD25DP06NMATMA1DKR-ND
MOSFET P-CH 60V 6.5A TO252-3

MOSFET P-CH 60V 6.5A TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPD25DP06NMATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD25DP06NMATMA1CT-ND
Single FETs, MOSFETs 448-IPD25DP06NMATMA1CT-ND
MOSFET P-CH 60V 6.5A TO252-3

MOSFET P-CH 60V 6.5A TO252-3

Buy Now Datasheet
Single FETs, MOSFETs - 448-IPD25DP06NMATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
448-IPD25DP06NMATMA1TR-ND
Single FETs, MOSFETs 448-IPD25DP06NMATMA1TR-ND
P-Channel 60V 6.5A (Tc) 28W (Tc) Surface Mount PG-TO252-3-313

P-Channel 60V 6.5A (Tc) 28W (Tc) Surface Mount PG-TO252-3-313

Buy Now Datasheet
 - IPD25DP06NMATMA1 - Rochester Electronics
Newburyport, MA, United States
IPD25DP06NM - OptiMOS 3 Power-Transistor

IPD25DP06NM - OptiMOS 3 Power-Transistor

Supplier's Site Datasheet
Singapore, Singapore
60V 6.5A TO252 MOSFET Transistor
278-IPD25DP06NMATMA1
60V 6.5A TO252 MOSFET Transistor 278-IPD25DP06NMATMA1
MOSFET P-CH 60V 6.5A TO252-3 Product overview: IPD25DP06NMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD25DP06NMATMA1 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 6.5A TO252-3 Product overview: IPD25DP06NMATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 6.5A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 6.5A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPD25DP06NMATMA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 2733005 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2733005
MOSFETs 2733005
Infineon IPD25DP06NMATMA1

Infineon IPD25DP06NMATMA1

Supplier's Site
MOSFETs - 2733006 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2733006
MOSFETs 2733006
Infineon IPD25DP06NMATMA1

Infineon IPD25DP06NMATMA1

Supplier's Site
MOSFET TRENCH 40<-<100V

MOSFET TRENCH 40<-<100V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IPD25DP06NMATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IPD25DP06NMATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IPD25DP06NMATMA1
MOSFET P-CH 60V 6.5A TO252-3

MOSFET P-CH 60V 6.5A TO252-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1338015-IPD25DP06NMATMA1 448-IPD25DP06NMATMA1DKR-ND IPD25DP06NMATMA1 278-IPD25DP06NMATMA1 2733005 IPD25DP06NMATMA1 IPD25DP06NMATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs 60V 6.5A TO252 MOSFET Transistor MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel P-Channel
PD 28000 milliwatts 28 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type SOT3 TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 PG-TO252-3 Tape & Reel (TR) PG-TO252-3 TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63
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