Manufacturer: Infineon Technologies
Win Source Part Number: 874742-IPB60R180C7AT
Series: CoolMOS™ C7
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 650 V 13A (Tc) 68W (Tc) Surface Mount PG-TO263-3
Package: TO-263-4, D2Pak (3 Leads + Tab), TO-263AA
Package: Reel - TR
Mounting: Surface Mount
Family Name: IPB60R180
Categories: Discrete Semiconductor Products
Case / Package: PG-TO263-3
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: IPB60R180C7ATMA1DKR,
IPB60R180 - 600V CoolMOS N-Channel Power MOSFET
MOSFET N-CH 600V 13A TO263-3 Product overview: IPB60R180C7ATMA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 13A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 13A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPB60R180C7ATMA1
N-Channel 650V 13A (Tc) 68W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 13A (Tc) 68W (Tc) Surface Mount PG-TO263-3
N-Channel 650V 13A (Tc) 68W (Tc) Surface Mount PG-TO263-3
MOSFET N-CH 600V 13A TO263-3
MOSFET, N-CH, 600V, 13A, 68W, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
| Win Source Electronics | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 874742-IPB60R180C7ATMA1 | IPB60R180C7ATMA1 | 278-IPB60R180C7ATMA1 | IPB60R180C7ATMA1DKR-ND | 2152497 | 2152498P | IPB60R180C7ATMA1 | 93AC7106 | IPB60R180C7ATMA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB60R180C7ATMA1 | 600V 13A MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 600V, 13A, 68W, To-263; Transistor Polarity Infineon | MOSFET | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Package Type | SOT3; PG-TO263-3 | TO-263; TO-263-3 | Tape & Reel (TR) | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | TO-263; D2pak (to-263) | TO-263; TO-263 | TO-263; TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | TO-3; TO-263 | |
| Packing Method | Tape Reel; Tape & Reel | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| MOSFET Operating Mode | Enhancement | Enhancement |
