Infineon Technologies AG N-Channel Power MOSFET IPB048N15N5

Description
OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications Automotive high-voltage battery management system (BMS) General purpose motor drive - variating frequency and voltage Light electric vehicles (LEV) Medium voltage (MV) drive Telecommunication infrastructure Designers who used this product also designed with 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
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Description
OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications Automotive high-voltage battery management system (BMS) General purpose motor drive - variating frequency and voltage Light electric vehicles (LEV) Medium voltage (MV) drive Telecommunication infrastructure Designers who used this product also designed with 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
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Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPB048N15N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB048N15N5
N-Channel Power MOSFET IPB048N15N5
OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness. Summary of Features Lower R DS(on) without compromising FOM gd and FOM oss Lower output charge Ultra-low reverse recovery charge Increased commutation ruggedness Higher switching frequency possible Benefits Reduced paralleling Size reduction enabled with SuperSO8 best-in-class Higher power density designs More rugged products System cost reduction Improved EMI behavior Potential Applications Low voltage drives Telecom Solar Applications Automotive high-voltage battery management system (BMS) General purpose motor drive - variating frequency and voltage Light electric vehicles (LEV) Medium voltage (MV) drive Telecommunication infrastructure Designers who used this product also designed with 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 2EDL8123G3C | Gate driver ICs 2EDN7524R | Gate driver ICs OPTIGA TRUST M EXPRESS | OPTIGA™ Trust XMC4700-F100K1536 AA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4

OptiMOS™ 5 150V power MOSFETs from Infineon are particularly suitable for low voltage drives such as forklift and e-scooter, as well as telecom and solar applications. The products offer a breakthrough reduction in R DS(on) (up to 25% compared to the next best alternative in SuperSO8) and Q rr without compromising FOM gd and FOM OSS, effectively reducing design effort whilst optimizing system efficiency. Furthermore, the ultra-low reverse recovery charge (Q rr = 26 nC in SuperSO8) increases commutation ruggedness.


Summary of Features

  • Lower R DS(on) without compromising FOM gd and FOM oss
  • Lower output charge
  • Ultra-low reverse recovery charge
  • Increased commutation ruggedness
  • Higher switching frequency possible

Benefits

  • Reduced paralleling
  • Size reduction enabled with SuperSO8 best-in-class
  • Higher power density designs
  • More rugged products
  • System cost reduction
  • Improved EMI behavior

Potential Applications

  • Low voltage drives
  • Telecom
  • Solar

Applications

  • Automotive high-voltage battery management system (BMS)
  • General purpose motor drive - variating frequency and voltage
  • Light electric vehicles (LEV)
  • Medium voltage (MV) drive
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 2EDL8123G3C |
    Gate driver ICs
  • 2EDN7524R |
    Gate driver ICs
  • OPTIGA TRUST M EXPRESS |
    OPTIGA™ Trust
  • XMC4700-F100K1536 AA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • 2EDL8123G3C |
    Gate driver ICs
  • 2EDN7524R |
    Gate driver ICs
  • OPTIGA TRUST M EXPRESS |
    OPTIGA™ Trust
  • XMC4700-F100K1536 AA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • 2EDL8123G3C |
    Gate driver ICs
  • 2EDN7524R |
    Gate driver ICs
  • OPTIGA TRUST M EXPRESS |
    OPTIGA™ Trust
  • XMC4700-F100K1536 AA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
Supplier's Site Datasheet
Singapore
150 V Bipolar Transistor
48-IPB048N15N5
150 V Bipolar Transistor 48-IPB048N15N5
OptiMOSª5 Power-Transistor, 150 V Product overview: IPB048N15N5 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150 V. Search-friendly keywords include transistor, BJT, switching, amplification, 150 V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPB048N15N5 can be used for catalog matching and distributor lookup.

OptiMOSª5 Power-Transistor, 150 V Product overview: IPB048N15N5 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150 V. Search-friendly keywords include transistor, BJT, switching, amplification, 150 V, Bipolar Transistor, Unclassified. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 48-IPB048N15N5 can be used for catalog matching and distributor lookup.

Supplier's Site
Misc Products - IPB048N15N5 - 825958-IPB048N15N5 - Win Source Electronics
Laguna Hills, CA, United States
Misc Products - IPB048N15N5
825958-IPB048N15N5
Misc Products - IPB048N15N5 825958-IPB048N15N5
Manufacturer: Infineon Technologies Win Source Part Number: 825958-IPB048N15N5 Categories: Uncategorized Popularity: Medium Fake Threat In the Open Market: 87 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 825958-IPB048N15N5
Categories: Uncategorized
Popularity: Medium
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Limited

Buy Now
Transistors - IPB048N15N5 - ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB048N15N5
Transistors IPB048N15N5
TO-263-3 MOSFETs ROHS

TO-263-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global)
Product Category Power MOSFET Bipolar RF Transistors RF Transistors Transistors
Product Number IPB048N15N5 48-IPB048N15N5 825958-IPB048N15N5 IPB048N15N5
Product Name N-Channel Power MOSFET 150 V Bipolar Transistor Misc Products - IPB048N15N5 Transistors
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0048 ohms
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