The IPA50R800CE is a 500V CoolMOS CE N-channel power MOSFET in a PG-TO-220 FullPAK package, designed for cost-sensitive applications in consumer and lighting markets. It has a maximum drain-source on-state resistance of 0.80 Ω at 25°C, a continuous drain current rating of 7.6 A, and a pulsed drain current of 15.5 A. The device features a low gate charge of 12.4 nC, low output capacitance energy of 1.46 µJ at 400V, and high commutation ruggedness. It is qualified for standard grade applications and meets RoHS compliance with Pb-free plating and halogen-free mold compound. Thermal resistance from junction to case is 4.73 °C/W, and junction operating temperature ranges from -40°C to 150°C.
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Summary of Features
Benefits
Potential Applications
Manufacturer: Infineon Technologies
Win Source Part Number: 801766-IPA50R800CE
Packaging: Tube
Mounting Style: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 500V
Part Status: Obsolete (End Of Life)
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 13V
Temperature Range - Operating: -40°C ~ 150°C
Manufacturer Package: TO-220-3 Full Pack
Power Dissipation (Maximum): 26.4W (Tc)
Popularity: High
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 50
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 800mOhm at 1.5A, 13V
Gate Charge (Qg) (Maximum) at Vgs: 12.4nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 280pF at 100V
Current - Continuous Drain (Id) at 25°C: 5A (Tc)
Vgs(th) (Maximum) at Id: 3.5V at 130μA
Maximum Vgs: ±20V
N-Channel 500V 5A (Tc) 26.4W (Tc) Through Hole PG-TO220-FP
MOSFET N-CH 500V 5A TO220-FP Product overview: IPA50R800CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 5A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 5A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA50R800CE can be used for catalog matching and distributor lookup.
MOSFET N-CH 500V 5A TO220-FP
| Infineon Technologies AG | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA50R800CE | 801766-IPA50R800CE | IPA50R800CE-ND | 278-IPA50R800CE | IPA50R800CE | IPA50R800CE |
| Product Name | 500V-950V N-Channel Power MOSFET | FETs - Single - IPA50R800CE | Single FETs, MOSFETs | 500V 5A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | Si/SiC | |||||
| rDS(on) | 0.8000 ohms | |||||
| QG | 12.4 nC | |||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
