Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA50R380CE

Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs
Request a Quote Datasheet
Description
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA50R380CE - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA50R380CE
500V-950V N-Channel Power MOSFET IPA50R380CE
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. Summary of Features Reduced energy stored in output capacitance (E oss) High body diode ruggedness Reduced reverse recovery charge (Q rr ) Reduced gate charge (Q g ) Benefits Easy control of switching behavior Better light load efficiency compared to previous CoolMOS™ generations Cost attractive alternative compared to standard MOSFETs Outstanding quality and reliability of CoolMOS™ technology Potential Applications Consumer Lighting PC silverbox Designers who used this product also designed with 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs 2EDL23N06PJ | Gate driver ICs 2EDR8259X | Gate driver ICs

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.


Summary of Features

  • Reduced energy stored in output capacitance (E oss)
  • High body diode ruggedness
  • Reduced reverse recovery charge (Q rr )
  • Reduced gate charge (Q g )

Benefits

  • Easy control of switching behavior
  • Better light load efficiency compared to previous CoolMOS™ generations
  • Cost attractive alternative compared to standard MOSFETs
  • Outstanding quality and reliability of CoolMOS™ technology

Potential Applications

  • Consumer
  • Lighting
  • PC silverbox

Designers who used this product also designed with


  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
  • 2EDL23N06PJ |
    Gate driver ICs
  • 2EDR8259X |
    Gate driver ICs
Supplier's Site Datasheet
Singapore
500V 9.9A TO220 MOSFET Transistor
278-IPA50R380CE
500V 9.9A TO220 MOSFET Transistor 278-IPA50R380CE
MOSFET N-CH 500V 9.9A TO220-FP Product overview: IPA50R380CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 9.9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 9.9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA50R380CE can be used for catalog matching and distributor lookup.

MOSFET N-CH 500V 9.9A TO220-FP Product overview: IPA50R380CE from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 9.9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 9.9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA50R380CE can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - IPA50R380CE - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IPA50R380CE
Single FETs, MOSFETs IPA50R380CE
MOSFET N-CH 500V 9.9A TO220-FP

MOSFET N-CH 500V 9.9A TO220-FP

Supplier's Site Datasheet
Single FETs, MOSFETs - IPA50R380CE-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IPA50R380CE-ND
Single FETs, MOSFETs IPA50R380CE-ND
N-Channel 500V 9.9A (Tc) 29.2W (Tc) Through Hole PG-TO220-FP

N-Channel 500V 9.9A (Tc) 29.2W (Tc) Through Hole PG-TO220-FP

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET CONSUMER

MOSFET CONSUMER

Buy Now Datasheet
Integrated Circuits (ICs) - Transistors - MOSFETs - IPA50R380CE - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Transistors - MOSFETs
IPA50R380CE
Integrated Circuits (ICs) - Transistors - MOSFETs IPA50R380CE
Integrated Circuits (ICs) - Transistors - MOSFETs

Integrated Circuits (ICs) - Transistors - MOSFETs

Supplier's Site

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IPA50R380CE 278-IPA50R380CE IPA50R380CE IPA50R380CE-ND IPA50R380CE IPA50R380CE
Product Name 500V-950V N-Channel Power MOSFET 500V 9.9A TO220 MOSFET Transistor Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Integrated Circuits (ICs) - Transistors - MOSFETs
Polarity N-Channel; N N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC MOSFET (Metal Oxide)
rDS(on) 0.3800 ohms
QG 32 nC
TJ -40 to 150 C (-40 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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