Infineon Technologies AG N-Channel Power MOSFET IPB057N06N

Description
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches
  • N-Channel Power MOSFET - IPB057N06N - Infineon Technologies AG
    Infineon Technologies AG
  • Transistors - IPB057N06N - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB057N06N - 119955-IPB057N06N - Win Source Electronics
    Win Source Electronics
Request a Quote Datasheet
Description
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - IPB057N06N - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB057N06N
N-Channel Power MOSFET IPB057N06N
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches

OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.


Summary of Features

  • Optimized for synchronous rectification
  • 40% lower R DS(on) than alternative devices
  • 40% improvement of FOM over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control for 12-48V systems
  • Or-ing switches
Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
60V 45A MOSFET Transistor
2088-IPB057N06N
60V 45A MOSFET Transistor 2088-IPB057N06N
MOSFETs N-Ch 60V 45A D2PAK-2 Product overview: IPB057N06N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 45A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB057N06N can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 60V 45A D2PAK-2 Product overview: IPB057N06N from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 45A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 45A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-IPB057N06N can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistors - IPB057N06N - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB057N06N
Transistors IPB057N06N
60V 17A 5.7mΩ@10V,45A 3W 2.8V@36uA 1 N-Channel TO-263-2 MOSFETs ROHS

60V 17A 5.7mΩ@10V,45A 3W 2.8V@36uA 1 N-Channel TO-263-2 MOSFETs ROHS

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB057N06N - 119955-IPB057N06N - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB057N06N
119955-IPB057N06N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB057N06N 119955-IPB057N06N
Manufacturer: Infineon Technologies Win Source Part Number: 119955-IPB057N06N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3W (Ta), 83W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO263-3 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 17A (Ta), 45A (Tc) Gate-Source Threshold Voltage: 2.8V @ 36μA Max Gate Charge: 27nC @ 10V Max Input Capacitance: 2000pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.7 mOhm @ 45A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 119955-IPB057N06N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO263-3
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 17A (Ta), 45A (Tc)
Gate-Source Threshold Voltage: 2.8V @ 36μA
Max Gate Charge: 27nC @ 10V
Max Input Capacitance: 2000pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.7 mOhm @ 45A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IPB057N06N
MOSFET IPB057N06N
MOSFET N-Ch 60V 45A D2PAK-2

MOSFET N-Ch 60V 45A D2PAK-2

Buy Now Datasheet
LCSC Electronics Technology (HK) Limited
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
IPB057N06N
Triode/MOS Tube/Transistor >> MOSFETs IPB057N06N
60V 17A 5.7mΩ@10V,45A 3W 2.8V@36uA N Channel TO-263-2 MOSFETs ROHS

60V 17A 5.7mΩ@10V,45A 3W 2.8V@36uA N Channel TO-263-2 MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Win Source Electronics VAST STOCK CO., LIMITED LCSC Electronics Technology (HK) Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB057N06N 2088-IPB057N06N IPB057N06N 119955-IPB057N06N IPB057N06N IPB057N06N
Product Name N-Channel Power MOSFET 60V 45A MOSFET Transistor Transistors TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB057N06N MOSFET Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0057 ohms 0.0057 ohms
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-263; PG-TO263-3 Reel TO-263; SOT3; PG-TO263-3 TO-263
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