Infineon Technologies AG N-Channel Power MOSFET IPD33CN10N-G

Description
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs
  • N-Channel Power MOSFET - IPD33CN10N-G - Infineon Technologies AG
    Infineon Technologies AG
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Description
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs
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Datasheet
Datasheet Summary
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The IPD33CN10N-G is an N-channel power MOSFET in a PG-TO252-3 package, designed for high-frequency switching and synchronous rectification. It has a drain-source voltage rating of 100 V, a continuous drain current of 27 A at 25 °C, and a maximum on-resistance of 33 mΩ at 25 °C. The device supports an operating junction temperature up to 175 °C and features a low gate charge of 18 to 24 nC and a gate plateau voltage of 5.6 V. It is RoHS compliant and halogen-free according to IEC 61249-2-21, and qualified per JEDEC standards. Thermal resistance from junction to case is 2.6 K/W, and with minimal footprint, junction-to-ambient thermal resistance is 75 K/W. Avalanche energy is rated at 47 mJ for a single pulse under specified conditions.

Datasheet Summary
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The IPD33CN10N-G is an N-channel power MOSFET in a PG-TO252-3 package, designed for high-frequency switching and synchronous rectification. It has a drain-source voltage rating of 100 V, a continuous drain current of 27 A at 25 °C, and a maximum on-resistance of 33 mΩ at 25 °C. The device supports an operating junction temperature up to 175 °C and features a low gate charge of 18 to 24 nC and a gate plateau voltage of 5.6 V. It is RoHS compliant and halogen-free according to IEC 61249-2-21, and qualified per JEDEC standards. Thermal resistance from junction to case is 2.6 K/W, and with minimal footprint, junction-to-ambient thermal resistance is 75 K/W. Avalanche energy is rated at 47 mJ for a single pulse under specified conditions.

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N-Channel Power MOSFET - IPD33CN10N-G - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPD33CN10N-G
N-Channel Power MOSFET IPD33CN10N-G
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Light electric vehicles (LEV) Telecommunication infrastructure Designers who used this product also designed with IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs IRFI3205 | N-Channel Power MOSFET IRF7490 | N-Channel Power MOSFET IRFR6215 | P-Channel Power MOSFET IR2112S | Gate driver ICs

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).


Summary of Features

  • Excellent switching performance
  • World’s lowest RDS(on)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)

Applications

  • Light electric vehicles (LEV)
  • Telecommunication infrastructure

Designers who used this product also designed with


  • IRFI3205 |
    N-Channel Power MOSFET
  • IRF7490 |
    N-Channel Power MOSFET
  • IRFR6215 |
    P-Channel Power MOSFET
  • IR2112S |
    Gate driver ICs
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRF7490 |
    N-Channel Power MOSFET
  • IRFR6215 |
    P-Channel Power MOSFET
  • IR2112S |
    Gate driver ICs
  • IRFI3205 |
    N-Channel Power MOSFET
  • IRF7490 |
    N-Channel Power MOSFET
  • IRFR6215 |
    P-Channel Power MOSFET
  • IR2112S |
    Gate driver ICs
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPD33CN10N-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0330 ohms
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