Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-Channel 900V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP
MOSFET N-CH 900V 15A TO220
MOSFET, N-CH, 900V, 15A, 150DEG C, 35W; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.28ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
| Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA90R340C3XKSA2 | 448-IPA90R340C3XKSA2-ND | IPA90R340C3XKSA2 | IPA90R340C3XKSA2 | 02AH6889 |
| Product Name | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 900V, 15A, 150Deg C, 35W; Transistor Polarity Infineon | |
| Polarity | N-Channel | N-Channel |
