Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IPA90R340C3XKSA1

Power Field-Effect Transistor, 15A I(D), 900V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Win Source Part Number: 1159092-IPA90R340C3XKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 900 V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 9.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Power Dissipation (Max): 35W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-FP
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IPA90R340C3; IPA90R340C3XKSA2; SP000415916;
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000415916,IPA90R340C3,IPA90R340C3-ND
Base Product Number: IPA90R
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 900V 15A (Tc) 35W (Tc) Through Hole PG-TO220-FP