Power Field-Effect Transistor, 80A I(D), 55V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-Channel 55V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2
MOSFET N-CH 55V 80A TO263-3
| Rochester Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPB80N06S207ATMA4 | IPB80N06S207ATMA4-ND | IPB80N06S207ATMA4 | IPB80N06S207ATMA4 |
| Product Name | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel |
