The IPA95R1K2P7 is a 950 V N-channel MOSFET designed for low-power switch-mode power supplies, featuring a PG-TO-220 FullPAK package with dimensions of 15.67 mm to 16.15 mm in length, 10.00 mm to 10.65 mm in width, and 28.70 mm to 29.75 mm in height. It has a maximum drain-source on-state resistance of 1.2 Ω, a typical gate threshold voltage of 3 V with a variation of ±0.5 V, and an integrated Zener diode for ESD protection up to Class 2 (HBM). The device supports a continuous drain current of 6 A at 25°C and 3.7 A at 100°C, with an avalanche energy rating of 11 mJ for single pulses and 0.14 mJ for repetitive pulses. Thermal resistance from junction to case is 4.7 °C/W, and junction temperature operates from -55°C to 150°C. The part is fully qualified according to JEDEC for industrial applications.
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.
Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.
Summary of Features
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Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPA95R1K2P7 |
| Product Name | 500V-950V N-Channel Power MOSFET |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 1.2 ohms |
| QG | 15 nC |
