Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA95R1K2P7

Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications Uninterruptible power supplies (UPS)
Request a Quote Datasheet
Description
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications Uninterruptible power supplies (UPS)
Request a Quote Datasheet

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500V-950V N-Channel Power MOSFET - IPA95R1K2P7 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA95R1K2P7
500V-950V N-Channel Power MOSFET IPA95R1K2P7
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in. Summary of Features Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability Benefits Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3 Enabling higher power density designs, BOM savings, and lower assembly cost Easy to drive and to design-in Better production yield by reducing ESD related failures Less production issues and reduced field returns Potential Applications Lighting Smart meter Mobile phone charger Notebook adaptor AUX power supply Industrial SMPS Applications Uninterruptible power supplies (UPS)

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.

Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.


Summary of Features

  • Best-in-class FOM RDS(on) Eoss; reduced Qg, Ciss and Coss
  • Best-in-class DPAK RDS(on) of 450 mΩ
  • Best-in-class VGS(th) of 3 V and smallest VGS(th) variation of ±0.5 V
  • Integrated Zener diode ESD protection up to Class 2 (HBM)
  • Best-in-class quality and reliability

Benefits

  • Up to 1% efficiency gain and 2°C to 10°C lower MOSFET temperature, compared to CoolMOS™ C3
  • Enabling higher power density designs, BOM savings, and lower assembly cost
  • Easy to drive and to design-in
  • Better production yield by reducing ESD related failures
  • Less production issues and reduced field returns

Potential Applications

  • Lighting
  • Smart meter
  • Mobile phone charger
  • Notebook adaptor
  • AUX power supply
  • Industrial SMPS

Applications

  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPA95R1K2P7
Product Name 500V-950V N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 1.2 ohms
QG 15 nC
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