IPB068N20NM6 is an N-channel MOSFET for power switching applications, housed in a D²PAK (PG-TO263-3) package measuring 9.65 mm by 10.67 mm. It has a drain-source breakdown voltage of 200 V, a maximum on-state resistance of 6.8 mΩ at 10 V gate bias and 100 A drain current, and a continuous drain current rating of 134 A at 25 °C case temperature. The device supports an operating junction temperature up to 175 °C, has a total gate charge of 73 to 110 nC, and an avalanche energy rating of 516 mJ at 77 A. It is RoHS compliant, halogen-free per IEC 61249-2-21, MSL 1 rated per J-STD-020, and fully qualified per JEDEC for industrial applications.
OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package
IPB068N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability.
The OptiMOS™ 6 200 V technology was designed for optimal performance in motor drive applications such as LEV, forklifts, and drones. The new OptiMOS™ 6 features industry leading RDS(on), improved switching and current sharing capability, enabling high power density, less paralleling, and excellent EMI performance.
The improved switching behavior makes the OptiMOS™ 6 200 V family an ideal choice for any type of switching applications such as telecom, server, solar, or audio. Additionally, the combination of wide SOA and industry-leading RDS(on) result in a perfect fit for static switching applications such as BMS.
Summary of Features
Compared to previous 200 V technology:
Pb-free plating and RoHS compliant
Benefits
Potential Applications
| Infineon Technologies AG | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | IPB068N20NM6 |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB068N20NM6 |
| Polarity | N-Channel; N |
| Transistor Technology / Material | Si/SiC |
| rDS(on) | 0.0068 ohms |
