IPB029N06NF2S is a 60 V N-channel power MOSFET in a D²PAK (PG-TO263-3) package with a maximum continuous drain current of 93 A at 100°C case temperature and a drain-source on-state resistance of 2.9 mΩ at 10 V gate voltage. It has a peak pulsed drain current of 480 A and is rated for 192 mJ single-pulse avalanche energy. The device is RoHS compliant and halogen-free according to IEC 61249-2-21. Thermal resistance from junction to case is 0.95 °C/W, and it operates from -55 °C to 175 °C. The package dimensions are 9.65 mm x 10.67 mm maximum with a 3-pin configuration and a drain tab.
StrongIRFET™ 2 single N-channel power MOSFET 60 V in D²PAK package
Infineon's StrongIRFET™ 2 power MOSFET 60 V features low RDS(on) of 2.9 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Summary of Features
Benefits
Potential Applications
| Infineon Technologies AG | ODG (Origin Data Global) | |
|---|---|---|
| Product Category | Power MOSFET | Transistors |
| Product Number | IPB029N06NF2S | IPB029N06NF2S |
| Product Name | Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - IPB029N06NF2S | Transistors |
| Polarity | N-Channel; N | |
| Transistor Technology / Material | Si/SiC | |
| rDS(on) | 0.0029 ohms | |
| QG | 68 nC |
