Infineon Technologies AG N-Channel Power MOSFET IPD031N03L-G

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6) Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications 48 V intermediate bus converter (IBC) Edge computing Designers who used this product also designed with IPP60R180CM8 | 600 V CoolMOS™ 8 BSC016N06NS | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPP60R180CM8 | 600 V CoolMOS™ 8 BSC016N06NS | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant IPP60R180CM8 | 600 V CoolMOS™ 8 BSC016N06NS | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs ICE2QR2280G-1 | CoolSET™ Quasi Resonant