Power Field-Effect Transistor, 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Manufacturer: Infineon Technologies
Win Source Part Number: 921243-IPA60R360P7SX
Series: CoolMOS™ P7
Operating Temperature Range: -40°C ~ 150°C (TJ)
Features: N-Channel 600 V 9A (Tc) 22W (Tc) Through Hole PG-TO220-FP
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: IPA60R360
Categories: Discrete Semiconductor Products
Case / Package: PG-TO220-FP
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MSL Level: Not Applicable
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 9A TO220 Product overview: IPA60R360P7SXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 9A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 9A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA60R360P7SXKSA
N-Channel 600V 9A (Tc) 22W (Tc) Through Hole PG-TO220-FP
Infineon MOSFET IPA60R360P7SXKSA1
MOSFET, N-CH, 600V, 9A, 22W, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 9A TO220
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IPA60R360P7SXKSA1 | 921243-IPA60R360P7SXKSA1 | 278-IPA60R360P7SXKSA1 | IPA60R360P7SXKSA1-ND | 2152479 | 2152480P | 93AC7094 | IPA60R360P7SXKSA1 | IPA60R360P7SXKSA1 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPA60R360P7SXKSA1 | 600V 9A TO220 MOSFET Transistor | Single FETs, MOSFETs | MOSFETs | MOSFETs | Mosfet, N-Ch, 600V, 9A, 22W, To-220Fp; Transistor Polarity Infineon | MOSFET | Single FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| rDS(on) | 0.3600 ohms | 0.3000 ohms | |||||||
| Package Type | PG-TO22-3 | SOT3; PG-TO220-FP | Tube | TO-220; TO-220-3 Full Pack | TO-220; To-220 fullpak | TO-220; TO-220 | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | |
| Packing Method | Tube; Tube | Tube | |||||||
| TJ | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) | -40 to 150 C (-40 to 302 F) |
