N-Channel 800V 6A (Tc) 26W (Tc) Through Hole PG-TO220-3-31
MOSFET N-CH 800V 6A TO220 Product overview: IPA80R900P7XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 6A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 6A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IPA80R900P7XKSA1
Win Source Part Number: 1353498-IPA80R900P7X
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
Mfr: Infineon Technologies
Series: CoolMOS™ P7
Package: Tube
Product Status: Active
Package / Case: TO-220-3 Full Pack
Supplier Device Package: PG-TO220-3-31
Base Product Number: IPA80R900
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 500 V
Power Dissipation (Max): 26W (Tc)
Mounting Type: Through Hole
HTSUS: 8541.29.0095
REACH Status: REACH Unaffected
ECCN: EAR99
Power Field-Effect Transistor, 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET N-CH 800V 6A TO220
| DigiKey | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IPA80R900P7XKSA1-ND | 278-IPA80R900P7XKSA1 | 2152487P | 2152487 | 1353498-IPA80R900P7XKSA1 | IPA80R900P7XKSA1 | IPA80R900P7XKSA1 | IPA80R900P7XKSA1 |
| Product Name | Single FETs, MOSFETs | 800V 6A TO220 MOSFET Transistor | MOSFETs | MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Package Type | TO-220; TO-220-3 Full Pack | Tube | TO-220; TO-220 | TO-220; To-220 fullpak | SOT3 | PG-TO22-3 | TO-220; TO-220-3 Full Pack | |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| V(BR)DSS | 800 volts | |||||||
| PD | 26 milliwatts | 26000 milliwatts |
